Engineering
Monolayer
100%
Fermi Level
100%
Molybdenum Disulfide
100%
Free Edge
100%
Field Effect Transistor
50%
Barrier Height
50%
Metallizations
50%
Schottky Barrier
50%
One Dimensional
50%
Channel Region
50%
Dimensionality
50%
2D Material
50%
Interline
50%
Keyphrases
MoS2 FET
100%
Free Edge
100%
Edge Contact
100%
On-state Current
28%
Contact Device
28%
Top Contact
28%
In Situ
14%
High Performance
14%
Electrical Characteristics
14%
First-principles Calculations
14%
Molybdenite
14%
Fabrication Methods
14%
Transistor Device
14%
Schottky Barrier Height
14%
Semiconductors
14%
Fermi Level
14%
Fermi Level pinning
14%
Metallization
14%
Semiconductor-metal Transition
14%
Metal Deposition
14%
Transistor Scaling
14%
Low Dimensionality
14%
In-situ Process
14%
Local Electronic Structure
14%
NiMoS2
14%
Monolayer 2D Materials
14%
MoS2 Edges
14%
Material Science
Monolayers
100%
Transistor
100%
Electrical Property
50%
Field Effect Transistor
50%
Schottky Barrier
50%
Electronic Structure
50%
Two-Dimensional Material
50%
Metal Deposition
50%