Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications

Shih Ching Chen; Ting Chang Chang; Po-Tsun Liu; Yung Chun Wu; Chin Cheng Ko; Sidney Yang; Li Wei Feng; S. M. Sze; Chun Yen Chang; Chen Hsin Lien

doi:10.1063/1.2813621

Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications

Shih Ching Chen^*, Ting Chang Chang, Po-Tsun Liu, Yung Chun Wu, Chin Cheng Ko, Sidney Yang, Li Wei Feng, S. M. Sze, Chun Yen Chang, Chen Hsin Lien

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

In this work, we studied a pi-shape gate polycrystalline silicon thin-film transistor (poly-Si TFT) with silicon-oxide-nitride-oxide-silicon (SONOS) layers and nanowire channels for the application of electric driver and nonvolatile memory. The proposed pi-gate TFT-SONOS has superior transfer characteristics and its output characteristic also exhibits the high driving current and the suppression of the kink effect. For memory application, the device can provide high program/erase efficiency and large threshold voltage shift under adequate bias operation. The enhanced performance for the pi-gate TFT-SONOS is attributed to the larger effective channel width and the number of channel corners.

Original language	English
Article number	213101
Number of pages	3
Journal	Applied Physics Letters
Volume	91
Issue number	21
DOIs	https://doi.org/10.1063/1.2813621
State	Published - 2007

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title = "Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications",

abstract = "In this work, we studied a pi-shape gate polycrystalline silicon thin-film transistor (poly-Si TFT) with silicon-oxide-nitride-oxide-silicon (SONOS) layers and nanowire channels for the application of electric driver and nonvolatile memory. The proposed pi-gate TFT-SONOS has superior transfer characteristics and its output characteristic also exhibits the high driving current and the suppression of the kink effect. For memory application, the device can provide high program/erase efficiency and large threshold voltage shift under adequate bias operation. The enhanced performance for the pi-gate TFT-SONOS is attributed to the larger effective channel width and the number of channel corners.",

author = "Chen, {Shih Ching} and Chang, {Ting Chang} and Po-Tsun Liu and Wu, {Yung Chun} and Ko, {Chin Cheng} and Sidney Yang and Feng, {Li Wei} and Sze, {S. M.} and Chang, {Chun Yen} and Lien, {Chen Hsin}",

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doi = "10.1063/1.2813621",

language = "English",

volume = "91",

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T1 - Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications

AU - Chen, Shih Ching

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Wu, Yung Chun

AU - Ko, Chin Cheng

AU - Yang, Sidney

AU - Feng, Li Wei

AU - Sze, S. M.

AU - Chang, Chun Yen

AU - Lien, Chen Hsin

PY - 2007

Y1 - 2007

N2 - In this work, we studied a pi-shape gate polycrystalline silicon thin-film transistor (poly-Si TFT) with silicon-oxide-nitride-oxide-silicon (SONOS) layers and nanowire channels for the application of electric driver and nonvolatile memory. The proposed pi-gate TFT-SONOS has superior transfer characteristics and its output characteristic also exhibits the high driving current and the suppression of the kink effect. For memory application, the device can provide high program/erase efficiency and large threshold voltage shift under adequate bias operation. The enhanced performance for the pi-gate TFT-SONOS is attributed to the larger effective channel width and the number of channel corners.

AB - In this work, we studied a pi-shape gate polycrystalline silicon thin-film transistor (poly-Si TFT) with silicon-oxide-nitride-oxide-silicon (SONOS) layers and nanowire channels for the application of electric driver and nonvolatile memory. The proposed pi-gate TFT-SONOS has superior transfer characteristics and its output characteristic also exhibits the high driving current and the suppression of the kink effect. For memory application, the device can provide high program/erase efficiency and large threshold voltage shift under adequate bias operation. The enhanced performance for the pi-gate TFT-SONOS is attributed to the larger effective channel width and the number of channel corners.

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DO - 10.1063/1.2813621

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SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 213101

ER -

Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications

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