High-density ZnO nanorods were vertically grown on Si coated with ZnO film (ZnOSi substrate) from aqueous solution at low temperatures. The ZnO nanorods after annealed in various atmospheres still present good c -axis crystalline character but exhibit remarkable differences in photoluminescence (PL) properties. Enhancement of PL properties due to N2 -atmosphere annealing for ultraviolet emission can be attributed to the reduction of defect density because the nonparamagnetic singly ionized state (N-) can easily occupy the oxygen vacancies as evidenced by Raman spectroscopy and electron paramagnetic resonance spectrometry. The extended x-ray absorption fine structure reveals that the annealing atmosphere shows no apparent influence on the deep-level defects of ZnO nanorods except that some ions are possibly trapped or adsorbed on the surface of the ZnO nanorods.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1 Nov 2005|