Physical characterization of ZnO nanorods grown on Si from aqueous solution and annealed at various atmospheres

Chih Cheng Yang, San-Yuan Chen, Hsin Yi Lee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

High-density ZnO nanorods were vertically grown on Si coated with ZnO film (ZnOSi substrate) from aqueous solution at low temperatures. The ZnO nanorods after annealed in various atmospheres still present good c -axis crystalline character but exhibit remarkable differences in photoluminescence (PL) properties. Enhancement of PL properties due to N2 -atmosphere annealing for ultraviolet emission can be attributed to the reduction of defect density because the nonparamagnetic singly ionized state (N-) can easily occupy the oxygen vacancies as evidenced by Raman spectroscopy and electron paramagnetic resonance spectrometry. The extended x-ray absorption fine structure reveals that the annealing atmosphere shows no apparent influence on the deep-level defects of ZnO nanorods except that some ions are possibly trapped or adsorbed on the surface of the ZnO nanorods.

Original languageEnglish
Pages (from-to)2347-2350
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number6
DOIs
StatePublished - 1 Nov 2005

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