@inproceedings{d7c70ca6a797449da8b920b563d0cfcf,
title = "Physical Analysis of Non-monotonic DIBL Dependence on Back Gate Bias in Thick Front Gate Oxide FDSOI MOSFETs",
abstract = "The non-monotonic DIBL behavior observed with variation in back gate voltage, in thick front gate oxide (FGOX) long channel FDSOI transistor is presented in this work. The physical origin of this behavior is the fringing field induced channel potential variation, from drain to drain side channel region, through thick FGOX for negative back bias, and through BOX for positive back bias. Additonally, we study the impact of channel length scaling on non-monotonic DIBL with variation in back gate voltage.",
keywords = "DIBL, FDSOI, fringing field, Fully Depleted Silicon On Insulator, threshold voltage, UTBSOI",
author = "Dabhi, {Chetan Kumar} and Pragya Kushwaha and Harshit Agarwal and Chauhan, {Sarvesh S.} and Chenming Hu and Chauhan, {Yogesh Singh}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.; 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019 ; Conference date: 14-10-2019 Through 17-10-2019",
year = "2019",
month = oct,
day = "14",
doi = "10.1109/S3S46989.2019.9320666",
language = "English",
series = "2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019",
address = "美國",
}