Photostability improvement of a-InGaZnO TFTs by introducing a transparent UV shielding layer

Min Yen Tsai; Yun Chu Tsai; Li Feng Teng; Po-Tsun Liu; Han Ping D. Shieh

doi:10.1002/j.2168-0159.2013.tb06172.x

Photostability improvement of a-InGaZnO TFTs by introducing a transparent UV shielding layer

Min Yen Tsai, Yun Chu Tsai, Li Feng Teng, Po-Tsun Liu, Han Ping D. Shieh

Department of Photonics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The photosensitivity and stability of a-IGZO TFTs can be efficiently improved by introducing a transparent passivation layer made of Mo-doped ZnO (MZO). Under a negative bias illumination stress (NBIS) with photoenergy (∼3.4eV), the ΔV_th of MZO-passivated TFTs was 0.39 V after 5400 sec of NBIS, whereas the unpassivated TFTs showed a large ΔV _th of -10.56 V. Moreover, the unpassivated TFTs exhibited a slight positive V_th shift of 1.69 V after 5400 sec of positive bias stress (PBS), while the ΔV_th of MZO-passivated TFTs was only 0.45 V.

Original language	English
Pages (from-to)	178-181
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	44
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2013.tb06172.x
State	Published - 1 Jan 2013

Keywords

a-IGZO
negative bias illumination stress (NBIS)
passivation layer
photosensitivity
transparent UV shielding layer

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10.1002/j.2168-0159.2013.tb06172.x

Cite this

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title = "Photostability improvement of a-InGaZnO TFTs by introducing a transparent UV shielding layer",

abstract = "The photosensitivity and stability of a-IGZO TFTs can be efficiently improved by introducing a transparent passivation layer made of Mo-doped ZnO (MZO). Under a negative bias illumination stress (NBIS) with photoenergy (∼3.4eV), the ΔVth of MZO-passivated TFTs was 0.39 V after 5400 sec of NBIS, whereas the unpassivated TFTs showed a large ΔV th of -10.56 V. Moreover, the unpassivated TFTs exhibited a slight positive Vth shift of 1.69 V after 5400 sec of positive bias stress (PBS), while the ΔVth of MZO-passivated TFTs was only 0.45 V.",

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AU - Teng, Li Feng

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AU - Shieh, Han Ping D.

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N2 - The photosensitivity and stability of a-IGZO TFTs can be efficiently improved by introducing a transparent passivation layer made of Mo-doped ZnO (MZO). Under a negative bias illumination stress (NBIS) with photoenergy (∼3.4eV), the ΔVth of MZO-passivated TFTs was 0.39 V after 5400 sec of NBIS, whereas the unpassivated TFTs showed a large ΔV th of -10.56 V. Moreover, the unpassivated TFTs exhibited a slight positive Vth shift of 1.69 V after 5400 sec of positive bias stress (PBS), while the ΔVth of MZO-passivated TFTs was only 0.45 V.

AB - The photosensitivity and stability of a-IGZO TFTs can be efficiently improved by introducing a transparent passivation layer made of Mo-doped ZnO (MZO). Under a negative bias illumination stress (NBIS) with photoenergy (∼3.4eV), the ΔVth of MZO-passivated TFTs was 0.39 V after 5400 sec of NBIS, whereas the unpassivated TFTs showed a large ΔV th of -10.56 V. Moreover, the unpassivated TFTs exhibited a slight positive Vth shift of 1.69 V after 5400 sec of positive bias stress (PBS), while the ΔVth of MZO-passivated TFTs was only 0.45 V.

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Photostability improvement of a-InGaZnO TFTs by introducing a transparent UV shielding layer

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