Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors

Keyphrases

• Amorphous InGaZnO (a-IGZO) 100%
• Photoresponsivity 100%
• Photosensing 100%
• Amorphous Oxide Semiconductor 100%
• Thin-film Transistors 66%
• Stannic Oxide 66%
• Ultrathin 33%
• Order of Magnitude 33%
• Light Detection 33%
• Visible Spectrum 33%
• Active Layer 33%
• P-type 33%
• Sensor Device 33%
• Signal-to-noise Ratio 33%
• Physical Model 33%
• Capping Layer 33%
• Electrical Uniformity 33%
• Oxide Layer 33%
• Visible Light 33%
• Device Application 33%
• Material Analysis 33%
• Heterojunction Structure 33%
• Charge Pumping Method 33%
• Optical Signal 33%
• Optical Responsivity 33%
• Next Generation Displays 33%
• Persistent Photoconductivity 33%
• Natural Recombination 33%
• Visible Light Sensing 33%

Engineering

• Thin-Film Transistor 100%
• Amorphous Oxide 100%
• Oxide Semiconductor 100%
• Heterojunctions 50%
• Sensor Device 50%
• Signal-to-Noise Ratio 50%
• Active Layer 50%
• Responsivity 50%
• Capping Layer 50%
• Oxide Layer 50%
• Physical Model 50%
• Detailed Material 50%

Material Science

• Oxide Compound 100%
• Thin-Film Transistor 100%
• Oxide Semiconductor 100%
• Gallium 50%
• Zinc Oxide 50%
• Indium 50%
• Signal-to-Noise Ratio 50%
• Photoconductivity 50%
• Heterojunction Structure 50%