Photoresponses and memory effects in organic thin film transistors incorporating poly(3-hexylthiophene)/CdSe quantum dots

Chen Chia Chen*, Mao Yuan Chiu, Jeng-Tzong Sheu, Kung-Hwa Wei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

64 Scopus citations

Abstract

This paper describes the optical responses and memory effects of poly(3-hexylthiophene) (P3HT)/CdSe quantum dot (QD) thin-film transistors (TFTs). TFTs incorporating P3HT/CdSe QD blends as the active layer exhibited higher photocurrents than did the corresponding P3HT-only devices because the heterojunction between P3HT and the CdSe QDs enhanced the separation of excitons. Moreover, the CdSe QDs served as trap centers so that the memory effect was maintained for several hours, even when the device was operated without a gating voltage. Here, we demonstrate the potential applicability of such P3HT/CdSe QD TFTs through repeated optical programming and electrical erasing.

Original languageEnglish
Article number143105
JournalApplied Physics Letters
Volume92
Issue number14
DOIs
StatePublished - 21 Apr 2008

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