Photonic crystal surface emitting lasers with quantum dot active region

Tzu Shan Chen; Zong Lin Li; Ming Yang Hsu; Kuo-Jui Lin; Sheng-Di Lin

doi:10.1109/JLT.2017.2744978

Photonic crystal surface emitting lasers with quantum dot active region

Tzu Shan Chen, Zong Lin Li, Ming Yang Hsu, Kuo-Jui Lin^*, Sheng-Di Lin

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.

Original language	English
Article number	8016584
Pages (from-to)	4547-4552
Number of pages	6
Journal	Journal of Lightwave Technology
Volume	35
Issue number	20
DOIs	https://doi.org/10.1109/JLT.2017.2744978
State	Published - 15 Oct 2017

Keywords

Optical pumping
Photonic crystals
Quantum dots
Semiconductor lasers
Surface emitting lasers

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10.1109/JLT.2017.2744978

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title = "Photonic crystal surface emitting lasers with quantum dot active region",

abstract = "GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.",

keywords = "Optical pumping, Photonic crystals, Quantum dots, Semiconductor lasers, Surface emitting lasers",

author = "Chen, {Tzu Shan} and Li, {Zong Lin} and Hsu, {Ming Yang} and Kuo-Jui Lin and Sheng-Di Lin",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = oct,

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doi = "10.1109/JLT.2017.2744978",

language = "English",

volume = "35",

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T1 - Photonic crystal surface emitting lasers with quantum dot active region

AU - Chen, Tzu Shan

AU - Li, Zong Lin

AU - Hsu, Ming Yang

AU - Lin, Kuo-Jui

AU - Lin, Sheng-Di

PY - 2017/10/15

Y1 - 2017/10/15

N2 - GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.

AB - GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.

KW - Optical pumping

KW - Photonic crystals

KW - Quantum dots

KW - Semiconductor lasers

KW - Surface emitting lasers

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DO - 10.1109/JLT.2017.2744978

M3 - Article

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SN - 0733-8724

VL - 35

SP - 4547

EP - 4552

JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

IS - 20

M1 - 8016584

ER -

Photonic crystal surface emitting lasers with quantum dot active region

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