Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material

Hsiang-Ting Lin; Kung-Shu Hsu; Chih-Chi Chang; Wei-Hsun Lin; Shih-Yen Lin; Shu-Wei Chang; Yia-Chung Chang; Min-Hsiung Shih

doi:10.1038/s41598-020-61539-5

Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material

Hsiang-Ting Lin, Kung-Shu Hsu, Chih-Chi Chang, Wei-Hsun Lin, Shih-Yen Lin, Shu-Wei Chang, Yia-Chung Chang, Min-Hsiung Shih^*

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal stability. In this study, utilizing a high quality photonic crystal circular nanobeam cavity with a high quality factor and a sub-micrometer mode volume, we demonstrated an ultra-compact semiconductor laser with type-II gallium antimonide/gallium arsenide quantum rings (GaSb/GaAs QRs) as the gain medium. The lasing mode localized around the defect region of the nanobeam had a small modal volume and significant coupling with the photons emitted by QRs. It leads the remarkable shortening of carrier lifetime observed from the time-resolved photoluminescence (TRPL) and a high Purcell factor. Furthermore, a high characteristic temperature of 114K was observed from the device. The lasing performances indicated the type-II QRs laser is suitable for applications of photonic integrated circuit and bio-detection applications.

Original language	English
Article number	4757
Number of pages	9
Journal	Scientific reports
Volume	10
Issue number	1
DOIs	https://doi.org/10.1038/s41598-020-61539-5
State	Published - 16 Mar 2020

Keywords

AUGER RECOMBINATION
MICRODISK LASERS
TEMPERATURE
NANOCAVITIES
SUPPRESSION
OPERATION
STATES
DEFECT
DOTS

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@article{fd0604deb9f4445abafc05df7828dd18,

title = "Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material",

abstract = "The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal stability. In this study, utilizing a high quality photonic crystal circular nanobeam cavity with a high quality factor and a sub-micrometer mode volume, we demonstrated an ultra-compact semiconductor laser with type-II gallium antimonide/gallium arsenide quantum rings (GaSb/GaAs QRs) as the gain medium. The lasing mode localized around the defect region of the nanobeam had a small modal volume and significant coupling with the photons emitted by QRs. It leads the remarkable shortening of carrier lifetime observed from the time-resolved photoluminescence (TRPL) and a high Purcell factor. Furthermore, a high characteristic temperature of 114K was observed from the device. The lasing performances indicated the type-II QRs laser is suitable for applications of photonic integrated circuit and bio-detection applications.",

keywords = "AUGER RECOMBINATION, MICRODISK LASERS, TEMPERATURE, NANOCAVITIES, SUPPRESSION, OPERATION, STATES, DEFECT, DOTS",

author = "Hsiang-Ting Lin and Kung-Shu Hsu and Chih-Chi Chang and Wei-Hsun Lin and Shih-Yen Lin and Shu-Wei Chang and Yia-Chung Chang and Min-Hsiung Shih",

year = "2020",

month = mar,

day = "16",

doi = "10.1038/s41598-020-61539-5",

language = "English",

volume = "10",

journal = "Scientific reports",

issn = "2045-2322",

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T1 - Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material

AU - Lin, Hsiang-Ting

AU - Hsu, Kung-Shu

AU - Chang, Chih-Chi

AU - Lin, Wei-Hsun

AU - Lin, Shih-Yen

AU - Chang, Shu-Wei

AU - Chang, Yia-Chung

AU - Shih, Min-Hsiung

PY - 2020/3/16

Y1 - 2020/3/16

N2 - The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal stability. In this study, utilizing a high quality photonic crystal circular nanobeam cavity with a high quality factor and a sub-micrometer mode volume, we demonstrated an ultra-compact semiconductor laser with type-II gallium antimonide/gallium arsenide quantum rings (GaSb/GaAs QRs) as the gain medium. The lasing mode localized around the defect region of the nanobeam had a small modal volume and significant coupling with the photons emitted by QRs. It leads the remarkable shortening of carrier lifetime observed from the time-resolved photoluminescence (TRPL) and a high Purcell factor. Furthermore, a high characteristic temperature of 114K was observed from the device. The lasing performances indicated the type-II QRs laser is suitable for applications of photonic integrated circuit and bio-detection applications.

AB - The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal stability. In this study, utilizing a high quality photonic crystal circular nanobeam cavity with a high quality factor and a sub-micrometer mode volume, we demonstrated an ultra-compact semiconductor laser with type-II gallium antimonide/gallium arsenide quantum rings (GaSb/GaAs QRs) as the gain medium. The lasing mode localized around the defect region of the nanobeam had a small modal volume and significant coupling with the photons emitted by QRs. It leads the remarkable shortening of carrier lifetime observed from the time-resolved photoluminescence (TRPL) and a high Purcell factor. Furthermore, a high characteristic temperature of 114K was observed from the device. The lasing performances indicated the type-II QRs laser is suitable for applications of photonic integrated circuit and bio-detection applications.

KW - AUGER RECOMBINATION

KW - MICRODISK LASERS

KW - TEMPERATURE

KW - NANOCAVITIES

KW - SUPPRESSION

KW - OPERATION

KW - STATES

KW - DEFECT

KW - DOTS

U2 - 10.1038/s41598-020-61539-5

DO - 10.1038/s41598-020-61539-5

M3 - Article

SN - 2045-2322

VL - 10

JO - Scientific reports

JF - Scientific reports

IS - 1

M1 - 4757

ER -

Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material

Abstract

Keywords

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