@inproceedings{2c74e92181a24ad2bcf8fc400aa67724,
title = "Photon-Mediated Charge Transport and Stability of Physically-Defined and Self-Organized Germanium Quantum Dots/SON Barriers in Few-Hole Regime at T > 10K",
abstract = "We report, for the first time, photon-mediated charge transport through physically-defined Ge double quantum-dots (DQDs)/Si barrier and QD/Si3N4 single-hole transistor in few-hole regime for high-fidelity qubit operation at T > 10 K. Engineering strengths of size-tunable QDs, self-organized barriers, and self-aligned reservoirs enable controllable tunability of charging energy, level spacing and coupling energy of Ge DQDs by adjusting QD size and barrier width/potential. Hard-wall confinement and photon enhanced carrier transport are facilitated to resolve charge states of DQDs, improve tunneling current properties of SHTs with high peak-to-valley ratio (∼2000), low leakage (∼5 fA), large addition energy (∼50 meV), low 1/f noise (∼10-26 A2/Hz), and achieve DQD-SHT readout fidelity of 99.92% at T > 10K.",
keywords = "Few-hole, Fidelity, Germanium, Quantum Dots, SHTs",
author = "Lai, {Chi Cheng} and Chiu, {Yu Wen} and Wang, {I. Hsiang} and Ting Tsai and Chen, {Jhih Wei} and Wang, {Yen Hsiang} and Chang, {Mau Chung Frank} and Lin, {Horng Chih} and Li, {Pei Wen}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024 ; Conference date: 16-06-2024 Through 20-06-2024",
year = "2024",
doi = "10.1109/VLSITechnologyandCir46783.2024.10631509",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024",
address = "美國",
}