@inproceedings{8fd0d124c03e4f17900ef2a275dfa06c,
title = "Photoluminescence study of interdot carrier transfer on strain-relaxed InAs quantum dots",
abstract = "Photoluminescence (PL) properties of the strain relaxed InAs quantum dots (QDs) are studied as a function of temperature from 10 to 300 K. Two groups of QDs induced by strain relaxation are observed in the PL spectra. The PL peak position of the relaxed (non-relaxed) QDs locates at a higher (lower) energy. TEM image prove QDs are distributed into two groups and indicate the QDs relax the strain by diffusing indium to GaAs. In the 120-200 K temperature range, there are abnormal temperature behaviors attributed to the carrier transfer from the relaxed to non-relaxed QDs.",
keywords = "Bimodal distributions, InAs quantum dot, Interdot carrier transfer, Molecular beam epitaxy, TEM Analysis",
author = "Chiang, {Chen Hao} and Chang, {You Cheng} and Wu, {Yue Han} and Hsieh, {Meng Chien} and Yang, {Cheng Hong} and Wang, {Jia Feng} and Li Chang and Jenn-Fang Chen",
year = "2010",
month = jul,
doi = "10.1063/1.3666480",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "515--516",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}