Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

G. W. Shu; J. S. Wang; J. L. Shen; R. S. Hsiao; J. F. Chen; T. Y. Lin; C. H. Wu; Y. H. Huang; T. N. Yang

doi:10.1016/j.mseb.2009.09.028

Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

G. W. Shu, J. S. Wang, J. L. Shen^*, R. S. Hsiao, J. F. Chen, T. Y. Lin, C. H. Wu, Y. H. Huang, T. N. Yang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Photoluminescence (PL), PL excitation (PLE), and time-resolved PL were used to study effects of InGaAs layers on the optical properties of InAs/GaAs quantum dots (QDs). A rich fine structure in the excited states of confined excitons (up to n = 4 quantum states) was observed, providing useful information to study the quantum states in the InAs/GaAs QDs. A significant redshift of the PL peak energy for the QDs covered by InGaAs layers was observed, attributing to the decrease of the QD strain and the lowing of the quantum confinement.

Original language	English
Pages (from-to)	46-49
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	166
Issue number	1
DOIs	https://doi.org/10.1016/j.mseb.2009.09.028
State	Published - 15 Jan 2010

Keywords

InAs
Photoluminescence
Quantum dots

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10.1016/j.mseb.2009.09.028

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title = "Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers",

abstract = "Photoluminescence (PL), PL excitation (PLE), and time-resolved PL were used to study effects of InGaAs layers on the optical properties of InAs/GaAs quantum dots (QDs). A rich fine structure in the excited states of confined excitons (up to n = 4 quantum states) was observed, providing useful information to study the quantum states in the InAs/GaAs QDs. A significant redshift of the PL peak energy for the QDs covered by InGaAs layers was observed, attributing to the decrease of the QD strain and the lowing of the quantum confinement.",

keywords = "InAs, Photoluminescence, Quantum dots",

author = "Shu, {G. W.} and Wang, {J. S.} and Shen, {J. L.} and Hsiao, {R. S.} and Chen, {J. F.} and Lin, {T. Y.} and Wu, {C. H.} and Huang, {Y. H.} and Yang, {T. N.}",

year = "2010",

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day = "15",

doi = "10.1016/j.mseb.2009.09.028",

language = "English",

volume = "166",

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journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

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TY - JOUR

T1 - Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

AU - Shu, G. W.

AU - Wang, J. S.

AU - Shen, J. L.

AU - Hsiao, R. S.

AU - Chen, J. F.

AU - Lin, T. Y.

AU - Wu, C. H.

AU - Huang, Y. H.

AU - Yang, T. N.

PY - 2010/1/15

Y1 - 2010/1/15

N2 - Photoluminescence (PL), PL excitation (PLE), and time-resolved PL were used to study effects of InGaAs layers on the optical properties of InAs/GaAs quantum dots (QDs). A rich fine structure in the excited states of confined excitons (up to n = 4 quantum states) was observed, providing useful information to study the quantum states in the InAs/GaAs QDs. A significant redshift of the PL peak energy for the QDs covered by InGaAs layers was observed, attributing to the decrease of the QD strain and the lowing of the quantum confinement.

AB - Photoluminescence (PL), PL excitation (PLE), and time-resolved PL were used to study effects of InGaAs layers on the optical properties of InAs/GaAs quantum dots (QDs). A rich fine structure in the excited states of confined excitons (up to n = 4 quantum states) was observed, providing useful information to study the quantum states in the InAs/GaAs QDs. A significant redshift of the PL peak energy for the QDs covered by InGaAs layers was observed, attributing to the decrease of the QD strain and the lowing of the quantum confinement.

KW - InAs

KW - Photoluminescence

KW - Quantum dots

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U2 - 10.1016/j.mseb.2009.09.028

DO - 10.1016/j.mseb.2009.09.028

M3 - Article

AN - SCOPUS:71049167599

SN - 0921-5107

VL - 166

SP - 46

EP - 49

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1

ER -

Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

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