Photoluminescence studies of In-doped GaN:Mg films

Fu Chin Chang; Wu-Ching Chou; Wen Hsiung Chen; Ming Chih Lee; Wei-Kuo Chen; Huai Ying Huang

doi:10.1143/JJAP.44.7504

Photoluminescence studies of In-doped GaN:Mg films

Fu Chin Chang^*, Wu-Ching Chou, Wen Hsiung Chen, Ming Chih Lee, Wei-Kuo Chen, Huai Ying Huang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Photoluminescence (PL) studies of In-doped GaN:Mg films revealed that the Mg-related emission at 3.1 eV is enhanced by more than one order of magnitude on the shoulder of the broad band centered at 2.8 eV for GaN:Mg after an optimal In concentration was added into the films. This enhancement of the 3.1 eV band is believed to be associated with the reduction in the number of self-compensation centers. A slow decay in PL intensity evolution was also observed, which may be ascribed to a local energy barrier that impedes carriers that relax into the valence band. The temperature dependences of the decay time constants were measured and a barrier energy as high as ∼ 103 ± 7 meV was obtained for In-doped GaN:Mg as compared with 69 ± 8 meV for GaN:Mg.

Original language	English
Pages (from-to)	7504-7506
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.44.7504
State	Published - 11 Oct 2005

Keywords

Decay time
GaN:Mg
Isoelectronic doping
Luminescence
Self-compensation

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title = "Photoluminescence studies of In-doped GaN:Mg films",

abstract = "Photoluminescence (PL) studies of In-doped GaN:Mg films revealed that the Mg-related emission at 3.1 eV is enhanced by more than one order of magnitude on the shoulder of the broad band centered at 2.8 eV for GaN:Mg after an optimal In concentration was added into the films. This enhancement of the 3.1 eV band is believed to be associated with the reduction in the number of self-compensation centers. A slow decay in PL intensity evolution was also observed, which may be ascribed to a local energy barrier that impedes carriers that relax into the valence band. The temperature dependences of the decay time constants were measured and a barrier energy as high as ∼ 103 ± 7 meV was obtained for In-doped GaN:Mg as compared with 69 ± 8 meV for GaN:Mg.",

keywords = "Decay time, GaN:Mg, Isoelectronic doping, Luminescence, Self-compensation",

author = "Chang, {Fu Chin} and Wu-Ching Chou and Chen, {Wen Hsiung} and Lee, {Ming Chih} and Wei-Kuo Chen and Huang, {Huai Ying}",

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doi = "10.1143/JJAP.44.7504",

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T1 - Photoluminescence studies of In-doped GaN:Mg films

AU - Chang, Fu Chin

AU - Chou, Wu-Ching

AU - Chen, Wen Hsiung

AU - Lee, Ming Chih

AU - Chen, Wei-Kuo

AU - Huang, Huai Ying

PY - 2005/10/11

Y1 - 2005/10/11

N2 - Photoluminescence (PL) studies of In-doped GaN:Mg films revealed that the Mg-related emission at 3.1 eV is enhanced by more than one order of magnitude on the shoulder of the broad band centered at 2.8 eV for GaN:Mg after an optimal In concentration was added into the films. This enhancement of the 3.1 eV band is believed to be associated with the reduction in the number of self-compensation centers. A slow decay in PL intensity evolution was also observed, which may be ascribed to a local energy barrier that impedes carriers that relax into the valence band. The temperature dependences of the decay time constants were measured and a barrier energy as high as ∼ 103 ± 7 meV was obtained for In-doped GaN:Mg as compared with 69 ± 8 meV for GaN:Mg.

AB - Photoluminescence (PL) studies of In-doped GaN:Mg films revealed that the Mg-related emission at 3.1 eV is enhanced by more than one order of magnitude on the shoulder of the broad band centered at 2.8 eV for GaN:Mg after an optimal In concentration was added into the films. This enhancement of the 3.1 eV band is believed to be associated with the reduction in the number of self-compensation centers. A slow decay in PL intensity evolution was also observed, which may be ascribed to a local energy barrier that impedes carriers that relax into the valence band. The temperature dependences of the decay time constants were measured and a barrier energy as high as ∼ 103 ± 7 meV was obtained for In-doped GaN:Mg as compared with 69 ± 8 meV for GaN:Mg.

KW - Decay time

KW - GaN:Mg

KW - Isoelectronic doping

KW - Luminescence

KW - Self-compensation

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U2 - 10.1143/JJAP.44.7504

DO - 10.1143/JJAP.44.7504

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VL - 44

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 10

ER -

Photoluminescence studies of In-doped GaN:Mg films

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Keywords

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