Photoluminescence studies of In-doped GaN:Mg films

Fu Chin Chang*, Wu-Ching Chou, Wen Hsiung Chen, Ming Chih Lee, Wei-Kuo Chen, Huai Ying Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Photoluminescence (PL) studies of In-doped GaN:Mg films revealed that the Mg-related emission at 3.1 eV is enhanced by more than one order of magnitude on the shoulder of the broad band centered at 2.8 eV for GaN:Mg after an optimal In concentration was added into the films. This enhancement of the 3.1 eV band is believed to be associated with the reduction in the number of self-compensation centers. A slow decay in PL intensity evolution was also observed, which may be ascribed to a local energy barrier that impedes carriers that relax into the valence band. The temperature dependences of the decay time constants were measured and a barrier energy as high as ∼ 103 ± 7 meV was obtained for In-doped GaN:Mg as compared with 69 ± 8 meV for GaN:Mg.

Original languageEnglish
Pages (from-to)7504-7506
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number10
StatePublished - 11 Oct 2005


  • Decay time
  • GaN:Mg
  • Isoelectronic doping
  • Luminescence
  • Self-compensation


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