Photoluminescence (PL) studies of In-doped GaN:Mg films revealed that the Mg-related emission at 3.1 eV is enhanced by more than one order of magnitude on the shoulder of the broad band centered at 2.8 eV for GaN:Mg after an optimal In concentration was added into the films. This enhancement of the 3.1 eV band is believed to be associated with the reduction in the number of self-compensation centers. A slow decay in PL intensity evolution was also observed, which may be ascribed to a local energy barrier that impedes carriers that relax into the valence band. The temperature dependences of the decay time constants were measured and a barrier energy as high as ∼ 103 ± 7 meV was obtained for In-doped GaN:Mg as compared with 69 ± 8 meV for GaN:Mg.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|State||Published - 11 Oct 2005|
- Decay time
- Isoelectronic doping