Photoluminescence studies of GaN films of different buffer layer and doping concentration

C. C. Shen; C. K. Shu; H. C. Lin; J. Ou; Wei-Kuo Chen; M. C. Lee; W. H. Chen

Photoluminescence studies of GaN films of different buffer layer and doping concentration

C. C. Shen^*, C. K. Shu, H. C. Lin, J. Ou, Wei-Kuo Chen, M. C. Lee, W. H. Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of ∼ -4 x 10^-4 eV-K^-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n^1/3. We also obtained a concentration coefficient of 2.34 x 10^-4 eV·cm and a band gap energy of 3.426 eV in the undoped GaN film.

Original language	English
Pages (from-to)	32-37
Number of pages	6
Journal	Chinese Journal of Physics
Volume	36
Issue number	1
State	Published - 1998

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@article{292c849af98448b98bee0fd4b34a31be,

title = "Photoluminescence studies of GaN films of different buffer layer and doping concentration",

abstract = "Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of ∼ -4 x 10-4 eV-K-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n1/3. We also obtained a concentration coefficient of 2.34 x 10-4 eV·cm and a band gap energy of 3.426 eV in the undoped GaN film.",

author = "Shen, {C. C.} and Shu, {C. K.} and Lin, {H. C.} and J. Ou and Wei-Kuo Chen and Lee, {M. C.} and Chen, {W. H.}",

year = "1998",

language = "English",

volume = "36",

pages = "32--37",

journal = "Chinese Journal of Physics",

issn = "0577-9073",

publisher = "Elsevier B.V.",

number = "1",

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TY - JOUR

T1 - Photoluminescence studies of GaN films of different buffer layer and doping concentration

AU - Shen, C. C.

AU - Shu, C. K.

AU - Lin, H. C.

AU - Ou, J.

AU - Chen, Wei-Kuo

AU - Lee, M. C.

AU - Chen, W. H.

PY - 1998

Y1 - 1998

N2 - Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of ∼ -4 x 10-4 eV-K-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n1/3. We also obtained a concentration coefficient of 2.34 x 10-4 eV·cm and a band gap energy of 3.426 eV in the undoped GaN film.

AB - Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of ∼ -4 x 10-4 eV-K-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n1/3. We also obtained a concentration coefficient of 2.34 x 10-4 eV·cm and a band gap energy of 3.426 eV in the undoped GaN film.

UR - http://www.scopus.com/inward/record.url?scp=18844374394&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:18844374394

SN - 0577-9073

VL - 36

SP - 32

EP - 37

JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

IS - 1

ER -

Photoluminescence studies of GaN films of different buffer layer and doping concentration

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