Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

W. C. Ke*, C. P. Fu, C. Y. Chen, L. Lee, C. S. Ku, Wu-Ching Chou, Wen-Hao Chang, M. C. Lee, Wei-Kuo Chen, W. J. Lin, Y. C. Cheng

*Corresponding author for this work

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Physics & Astronomy