Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

W. C. Ke; C. P. Fu; C. Y. Chen; L. Lee; C. S. Ku; Wu-Ching Chou; Wen-Hao Chang; M. C. Lee; Wei-Kuo Chen; W. J. Lin; Y. C. Cheng

doi:10.1063/1.2203510

Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

W. C. Ke^*, C. P. Fu, C. Y. Chen, L. Lee, C. S. Ku, Wu-Ching Chou, Wen-Hao Chang, M. C. Lee, Wei-Kuo Chen, W. J. Lin, Y. C. Cheng

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

Photoluminescence (PL) properties of InN dots embedded in GaN were investigated. We observed a systematic blueshift in the emission energy as the average dot height was reduced. The widely size-tunable emission energy can be ascribed to the size quantization effect. Temperature-dependent PL measurements show that the emission peak energies of the dots are insensitive to temperature, as compared with that of bulk film, indicating the localization of carriers in the dots. A reduced quenching of the PL from the InN dots was also observed, implying superior emission properties for the embedded InN dot structures.

Original language	English
Article number	191913
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	19
DOIs	https://doi.org/10.1063/1.2203510
State	Published - 8 May 2006

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title = "Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy",

abstract = "Photoluminescence (PL) properties of InN dots embedded in GaN were investigated. We observed a systematic blueshift in the emission energy as the average dot height was reduced. The widely size-tunable emission energy can be ascribed to the size quantization effect. Temperature-dependent PL measurements show that the emission peak energies of the dots are insensitive to temperature, as compared with that of bulk film, indicating the localization of carriers in the dots. A reduced quenching of the PL from the InN dots was also observed, implying superior emission properties for the embedded InN dot structures.",

author = "Ke, {W. C.} and Fu, {C. P.} and Chen, {C. Y.} and L. Lee and Ku, {C. S.} and Wu-Ching Chou and Wen-Hao Chang and Lee, {M. C.} and Wei-Kuo Chen and Lin, {W. J.} and Cheng, {Y. C.}",

year = "2006",

month = may,

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doi = "10.1063/1.2203510",

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T1 - Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

AU - Ke, W. C.

AU - Fu, C. P.

AU - Chen, C. Y.

AU - Lee, L.

AU - Ku, C. S.

AU - Chou, Wu-Ching

AU - Chang, Wen-Hao

AU - Lee, M. C.

AU - Chen, Wei-Kuo

AU - Lin, W. J.

AU - Cheng, Y. C.

PY - 2006/5/8

Y1 - 2006/5/8

N2 - Photoluminescence (PL) properties of InN dots embedded in GaN were investigated. We observed a systematic blueshift in the emission energy as the average dot height was reduced. The widely size-tunable emission energy can be ascribed to the size quantization effect. Temperature-dependent PL measurements show that the emission peak energies of the dots are insensitive to temperature, as compared with that of bulk film, indicating the localization of carriers in the dots. A reduced quenching of the PL from the InN dots was also observed, implying superior emission properties for the embedded InN dot structures.

AB - Photoluminescence (PL) properties of InN dots embedded in GaN were investigated. We observed a systematic blueshift in the emission energy as the average dot height was reduced. The widely size-tunable emission energy can be ascribed to the size quantization effect. Temperature-dependent PL measurements show that the emission peak energies of the dots are insensitive to temperature, as compared with that of bulk film, indicating the localization of carriers in the dots. A reduced quenching of the PL from the InN dots was also observed, implying superior emission properties for the embedded InN dot structures.

UR - http://www.scopus.com/inward/record.url?scp=33646713180&partnerID=8YFLogxK

U2 - 10.1063/1.2203510

DO - 10.1063/1.2203510

M3 - Article

AN - SCOPUS:33646713180

SN - 0003-6951

VL - 88

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 191913

ER -

Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

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