Photocurrent and differential absorption spectra of InGaAsN single- And double-quantum-well structures grown by molecular beam epitaxy

T. S. Lay; P. P. Shen; E. Y. Lin; K. M. Kong; L. P. Chen; J. S. Wang; Kuo-Jui Lin; J. Y. Chi

doi:10.1109/ICIPRM.2004.1442706

Photocurrent and differential absorption spectra of InGaAsN single- And double-quantum-well structures grown by molecular beam epitaxy

T. S. Lay^*, P. P. Shen, E. Y. Lin, K. M. Kong, L. P. Chen, J. S. Wang, Kuo-Jui Lin, J. Y. Chi

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum Δα ∼ 14400 cm^-1, which is 2.6 times larger than the maximum Δα ∼ 5400 cm ^-1 of the SQW sample.

Original language	English
Pages (from-to)	278-280
Number of pages	3
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
DOIs	https://doi.org/10.1109/ICIPRM.2004.1442706
State	Published - 31 May 2004
Event	2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 31 May 2004 → 4 Jun 2004

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10.1109/ICIPRM.2004.1442706

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Lay, T. S., Shen, P. P., Lin, E. Y., Kong, K. M., Chen, L. P., Wang, J. S., Lin, K.-J., & Chi, J. Y. (2004). Photocurrent and differential absorption spectra of InGaAsN single- And double-quantum-well structures grown by molecular beam epitaxy. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 278-280. https://doi.org/10.1109/ICIPRM.2004.1442706

@article{e962b5e5724e459eb77e3e859467677b,

title = "Photocurrent and differential absorption spectra of InGaAsN single- And double-quantum-well structures grown by molecular beam epitaxy",

abstract = "We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum Δα ∼ 14400 cm-1, which is 2.6 times larger than the maximum Δα ∼ 5400 cm -1 of the SQW sample.",

author = "Lay, {T. S.} and Shen, {P. P.} and Lin, {E. Y.} and Kong, {K. M.} and Chen, {L. P.} and Wang, {J. S.} and Kuo-Jui Lin and Chi, {J. Y.}",

year = "2004",

month = may,

day = "31",

doi = "10.1109/ICIPRM.2004.1442706",

language = "English",

pages = "278--280",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM ; Conference date: 31-05-2004 Through 04-06-2004",

}

Lay, TS, Shen, PP, Lin, EY, Kong, KM, Chen, LP, Wang, JS, Lin, K-J & Chi, JY 2004, 'Photocurrent and differential absorption spectra of InGaAsN single- And double-quantum-well structures grown by molecular beam epitaxy', Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 278-280. https://doi.org/10.1109/ICIPRM.2004.1442706

Photocurrent and differential absorption spectra of InGaAsN single- And double-quantum-well structures grown by molecular beam epitaxy. / Lay, T. S.; Shen, P. P.; Lin, E. Y. et al.
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 31.05.2004, p. 278-280.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Photocurrent and differential absorption spectra of InGaAsN single- And double-quantum-well structures grown by molecular beam epitaxy

AU - Lay, T. S.

AU - Shen, P. P.

AU - Lin, E. Y.

AU - Kong, K. M.

AU - Chen, L. P.

AU - Wang, J. S.

AU - Lin, Kuo-Jui

AU - Chi, J. Y.

PY - 2004/5/31

Y1 - 2004/5/31

N2 - We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum Δα ∼ 14400 cm-1, which is 2.6 times larger than the maximum Δα ∼ 5400 cm -1 of the SQW sample.

AB - We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum Δα ∼ 14400 cm-1, which is 2.6 times larger than the maximum Δα ∼ 5400 cm -1 of the SQW sample.

UR - http://www.scopus.com/inward/record.url?scp=23744459921&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.2004.1442706

DO - 10.1109/ICIPRM.2004.1442706

M3 - Conference article

AN - SCOPUS:23744459921

SN - 1092-8669

SP - 278

EP - 280

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM

Y2 - 31 May 2004 through 4 June 2004

ER -

Photocurrent and differential absorption spectra of InGaAsN single- And double-quantum-well structures grown by molecular beam epitaxy

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