Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

M. C. Wang, T. C. Chang*, Po-Tsun Liu, S. W. Tsao, J. R. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The photo-leakage-current (IPLC) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (Ea) of a-Si:H (:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H (:F). Experimental results show that the IPLC of a-Si:H (:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H (:F) material. However, the higher IPLC is observed in the hole conduction region, resulted from the larger Ea in the a-Si:H (:F) TFTs.

Original languageEnglish
Article number192114
Number of pages3
JournalApplied Physics Letters
Volume90
Issue number19
DOIs
StatePublished - 2007

Fingerprint

Dive into the research topics of 'Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor'. Together they form a unique fingerprint.

Cite this