Abstract
The generation of photocurrent at single-walled carbon nanotube (SWNT)-electrode contacts at zero bias was determined. The current produced can be amplified significantly by a factor of 4-7 upon application of a bias and, higher currents are always achieved at the electrode opposite to that with positive bias. It was found that the current build-up at negative bias is faster by a factor of 6-7 as compared to that of positive-bias operation. The results suggest that the electrostatic potential within nanotubes is highly sensitive to external electric fields at the junction region.
Original language | English |
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Pages (from-to) | 98-103 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 18 |
Issue number | 1 |
DOIs | |
State | Published - 5 Jan 2006 |
Keywords
- SCHOTTKY BARRIERS
- PHOTOCONDUCTIVITY
- TRANSISTORS