Phosphorus vacancy as a deep level in AlInP layers

Wei Jer Sung; Yu Rue Wu; Shih Chang Lee; Tzu Chi Wen; Tsang Jou Li; Jung Ting Chang; Wei-I Lee

doi:10.1143/JJAP.39.L567

Phosphorus vacancy as a deep level in AlInP layers

Wei Jer Sung^*, Yu Rue Wu, Shih Chang Lee, Tzu Chi Wen, Tsang Jou Li, Jung Ting Chang, Wei-I Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Examining this phosphorus-vacancy-related deep level provided a relatively simple means of understanding the phosphorus vacancy in AlInP, thus allowing us to determine an appropriate V/III mole ratio for growing AlInP.

Original language	English
Pages (from-to)	L567-L568
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	39
Issue number	6 B
DOIs	https://doi.org/10.1143/JJAP.39.L567
State	Published - 15 Jun 2000

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@article{5a51c15bfb88441087ad798cdeac1f9e,

title = "Phosphorus vacancy as a deep level in AlInP layers",

abstract = "Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Examining this phosphorus-vacancy-related deep level provided a relatively simple means of understanding the phosphorus vacancy in AlInP, thus allowing us to determine an appropriate V/III mole ratio for growing AlInP.",

author = "Sung, {Wei Jer} and Wu, {Yu Rue} and Lee, {Shih Chang} and Wen, {Tzu Chi} and Li, {Tsang Jou} and Chang, {Jung Ting} and Wei-I Lee",

year = "2000",

month = jun,

day = "15",

doi = "10.1143/JJAP.39.L567",

language = "English",

volume = "39",

pages = "L567--L568",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 B",

}

TY - JOUR

T1 - Phosphorus vacancy as a deep level in AlInP layers

AU - Sung, Wei Jer

AU - Wu, Yu Rue

AU - Lee, Shih Chang

AU - Wen, Tzu Chi

AU - Li, Tsang Jou

AU - Chang, Jung Ting

AU - Lee, Wei-I

PY - 2000/6/15

Y1 - 2000/6/15

N2 - Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Examining this phosphorus-vacancy-related deep level provided a relatively simple means of understanding the phosphorus vacancy in AlInP, thus allowing us to determine an appropriate V/III mole ratio for growing AlInP.

AB - Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Examining this phosphorus-vacancy-related deep level provided a relatively simple means of understanding the phosphorus vacancy in AlInP, thus allowing us to determine an appropriate V/III mole ratio for growing AlInP.

UR - http://www.scopus.com/inward/record.url?scp=0034207151&partnerID=8YFLogxK

U2 - 10.1143/JJAP.39.L567

DO - 10.1143/JJAP.39.L567

M3 - Article

AN - SCOPUS:0034207151

SN - 0021-4922

VL - 39

SP - L567-L568

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 6 B

ER -

Phosphorus vacancy as a deep level in AlInP layers

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