Phosphorus vacancy as a deep level in AlInP layers

Wei Jer Sung*, Yu Rue Wu, Shih Chang Lee, Tzu Chi Wen, Tsang Jou Li, Jung Ting Chang, Wei-I Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Examining this phosphorus-vacancy-related deep level provided a relatively simple means of understanding the phosphorus vacancy in AlInP, thus allowing us to determine an appropriate V/III mole ratio for growing AlInP.

Original languageEnglish
Pages (from-to)L567-L568
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number6 B
StatePublished - 15 Jun 2000


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