Phase and thickness dependence of thermal diffusivity in a-SiCxNy and a-BCxNy

Sur Chattopadhyay; L. C. Chen; S. C. Chien; S. T. Lin; C. T. Wu; K. H. Chen

doi:10.1016/S0040-6090(02)00747-2

Phase and thickness dependence of thermal diffusivity in a-SiC_xN_y and a-BC_xN_y

Sur Chattopadhyay^*, L. C. Chen, S. C. Chien, S. T. Lin, C. T. Wu, K. H. Chen

^*Corresponding author for this work

Institute of Biophotonics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Thermal diffusivity (α) and bonding configuration of amorphous silicon carbon nitride (a-SiC_xN_y) and boron carbon nitride (a-BC_xN_y) films on silicon substrates were studied. Measurement of α by the traveling wave technique and bonding characterisation through X-ray photoelectron spectroscopy in a-SiC_xN_y and a-BC_xN_y films having different carbon concentrations revealed that lower coordinated bonds were detrimental to the thermal diffusivity of these films. Furthermore, α was found to depend on the thickness of these films deposited on silicon. This was attributed to the interface thermal resistance between two thermally different materials, the film and the substrate, although other factors such as film microstructure could also play a role. An empirical relation for the variation of thermal diffusivity with thickness is proposed.

Original language	English
Pages (from-to)	205-211
Number of pages	7
Journal	Thin Solid Films
Volume	420-421
DOIs	https://doi.org/10.1016/S0040-6090(02)00747-2
State	Published - 2 Dec 2002

Keywords

Bonding characterisation
Physical vapour deposition
Thermal diffusivity
Traveling wave technique

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@article{a02621d0ca9543dc91b0eed0866dadab,

title = "Phase and thickness dependence of thermal diffusivity in a-SiCxNy and a-BCxNy",

abstract = "Thermal diffusivity (α) and bonding configuration of amorphous silicon carbon nitride (a-SiCxNy) and boron carbon nitride (a-BCxNy) films on silicon substrates were studied. Measurement of α by the traveling wave technique and bonding characterisation through X-ray photoelectron spectroscopy in a-SiCxNy and a-BCxNy films having different carbon concentrations revealed that lower coordinated bonds were detrimental to the thermal diffusivity of these films. Furthermore, α was found to depend on the thickness of these films deposited on silicon. This was attributed to the interface thermal resistance between two thermally different materials, the film and the substrate, although other factors such as film microstructure could also play a role. An empirical relation for the variation of thermal diffusivity with thickness is proposed.",

keywords = "Bonding characterisation, Physical vapour deposition, Thermal diffusivity, Traveling wave technique",

author = "Sur Chattopadhyay and Chen, {L. C.} and Chien, {S. C.} and Lin, {S. T.} and Wu, {C. T.} and Chen, {K. H.}",

note = "Funding Information: The work was carried out under a project funded by the National Science Council, Taiwan, under Contract Nos. NSC89-2112-M002-085, NSC90-2112-M002-048 and NSC89-2119-M001-011. One of the authors (S.C) acknowledges the award of a post-doctoral fellowship by the National Science Council, Taiwan.",

year = "2002",

month = dec,

day = "2",

doi = "10.1016/S0040-6090(02)00747-2",

language = "English",

volume = "420-421",

pages = "205--211",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Phase and thickness dependence of thermal diffusivity in a-SiCxNy and a-BCxNy

AU - Chattopadhyay, Sur

AU - Chen, L. C.

AU - Chien, S. C.

AU - Lin, S. T.

AU - Wu, C. T.

AU - Chen, K. H.

N1 - Funding Information: The work was carried out under a project funded by the National Science Council, Taiwan, under Contract Nos. NSC89-2112-M002-085, NSC90-2112-M002-048 and NSC89-2119-M001-011. One of the authors (S.C) acknowledges the award of a post-doctoral fellowship by the National Science Council, Taiwan.

PY - 2002/12/2

Y1 - 2002/12/2

N2 - Thermal diffusivity (α) and bonding configuration of amorphous silicon carbon nitride (a-SiCxNy) and boron carbon nitride (a-BCxNy) films on silicon substrates were studied. Measurement of α by the traveling wave technique and bonding characterisation through X-ray photoelectron spectroscopy in a-SiCxNy and a-BCxNy films having different carbon concentrations revealed that lower coordinated bonds were detrimental to the thermal diffusivity of these films. Furthermore, α was found to depend on the thickness of these films deposited on silicon. This was attributed to the interface thermal resistance between two thermally different materials, the film and the substrate, although other factors such as film microstructure could also play a role. An empirical relation for the variation of thermal diffusivity with thickness is proposed.

AB - Thermal diffusivity (α) and bonding configuration of amorphous silicon carbon nitride (a-SiCxNy) and boron carbon nitride (a-BCxNy) films on silicon substrates were studied. Measurement of α by the traveling wave technique and bonding characterisation through X-ray photoelectron spectroscopy in a-SiCxNy and a-BCxNy films having different carbon concentrations revealed that lower coordinated bonds were detrimental to the thermal diffusivity of these films. Furthermore, α was found to depend on the thickness of these films deposited on silicon. This was attributed to the interface thermal resistance between two thermally different materials, the film and the substrate, although other factors such as film microstructure could also play a role. An empirical relation for the variation of thermal diffusivity with thickness is proposed.

KW - Bonding characterisation

KW - Physical vapour deposition

KW - Thermal diffusivity

KW - Traveling wave technique

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U2 - 10.1016/S0040-6090(02)00747-2

DO - 10.1016/S0040-6090(02)00747-2

M3 - Article

AN - SCOPUS:0037011050

SN - 0040-6090

VL - 420-421

SP - 205

EP - 211

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Phase and thickness dependence of thermal diffusivity in a-SiC_xN_y and a-BC_xN_y

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Keywords

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