Phase and thickness dependence of thermal diffusivity in a-SiCxNy and a-BCxNy

Sur Chattopadhyay*, L. C. Chen, S. C. Chien, S. T. Lin, C. T. Wu, K. H. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Thermal diffusivity (α) and bonding configuration of amorphous silicon carbon nitride (a-SiCxNy) and boron carbon nitride (a-BCxNy) films on silicon substrates were studied. Measurement of α by the traveling wave technique and bonding characterisation through X-ray photoelectron spectroscopy in a-SiCxNy and a-BCxNy films having different carbon concentrations revealed that lower coordinated bonds were detrimental to the thermal diffusivity of these films. Furthermore, α was found to depend on the thickness of these films deposited on silicon. This was attributed to the interface thermal resistance between two thermally different materials, the film and the substrate, although other factors such as film microstructure could also play a role. An empirical relation for the variation of thermal diffusivity with thickness is proposed.

Original languageEnglish
Pages (from-to)205-211
Number of pages7
JournalThin Solid Films
StatePublished - 2 Dec 2002


  • Bonding characterisation
  • Physical vapour deposition
  • Thermal diffusivity
  • Traveling wave technique


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