Phase and Carrier Polarity Control of Sputtered MoTe2by Plasma-induced Defect Engineering

Chih Pin Lin*, Hao Hua Hsu, Tuo Hung Hou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Being able to precisely control the carrier polarity and conductivity plays a vital role while developing future two-dimensional (2D) transition metal dichalcogenides (TMDs)-based devices. Achieving such controllability in TMD material, however, remains challenging as a result of the strong Fermi-level pinning with contact metals [1]. MoTe 2 , one of the group-VI TMDs, has high mobility, a moderate bandgap, and the lower energy difference between polymorphic semiconducting 2H and metallic 1T' phases, allowing versatile electrical properties. It's known that controlling the number of chalcogen defects in TMD considerably alters its electrical characteristics [2] , [3]. In this study, we report the results of engineering Te defects in MoTe 2 by plasma treatment where (1) 2H phase is stable at a Te/Mo ratio between 1.88 and 2.13, and (2) MoTe 2 transistors can be converted from p- to n-type conduction by the defect-induced conduction band edge (CBE) lowering.

Original languageEnglish
Title of host publication2020 Device Research Conference, DRC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728170473
StatePublished - Jun 2020
Event2020 Device Research Conference, DRC 2020 - Columbus, United States
Duration: 21 Jun 202024 Jun 2020

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Conference2020 Device Research Conference, DRC 2020
Country/TerritoryUnited States


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