@inproceedings{8e0c53fc19064e1985524fb2f30082df,
title = "Perspective Roadmap of Advanced HfO2-based Ferroelectric Field Effect Transistors",
abstract = "The discovery of ferroelectricity in hafnium oxide (HfO2) has proved to be a game changer in the potential applications of ferroelectric non-volatile memories (NVM) in mainstream electronics. This paper discusses the present status, potential, and challenges facing ferroelectric field effect transistor (FeFET) memories and sketches promising technology evolution for the next decade and the most exciting applications.",
keywords = "Advanced FeFETs, CIM, FeFET, FeFin-FET, FeRAM, Hafnium Oxide, SCM",
author = "Sourav De and Cho, {Chen Yi} and Tarek Ali and Writam Banerjee and Ramirez, {Lucia Perez} and Nick Barrett and Sayani Majumder and Hou, {Tuo Hung}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 ; Conference date: 03-03-2024 Through 06-03-2024",
year = "2024",
doi = "10.1109/EDTM58488.2024.10511366",
language = "English",
series = "IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "IEEE Electron Devices Technology and Manufacturing Conference",
address = "美國",
}