Permeation barrier coatings by inductively coupled plasma CVD on polycarbonate substrates for flexible electronic applications

Eddy Lay, Dong Sing Wuu*, Shih Yung Lo, Ray-Hua Horng, Hsiao Fen Wei, Liang You Jiang, Hung Uang Lee, Yu Yang Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Silicon oxide (SiOx)/silicon nitride (SiNx) stacks and parylene thin films were deposited on flexible polycarbonate (PC) substrates using inductively coupled plasma chemical vapor deposition (ICPCVD) and a parylene reactor for permeation barrier applications. The effects of gas flow ratios on SiNx and SiOx film properties in terms of refractive index, internal stress, and water vapor transmission rate (WVTR) were investigated. It was found that the optical property and impermeability of SiNx and SiOx barrier films could be tailored by varying the gas flow ratio. The details of Ar plasma treatment effects on PC substrates in terms of contact angle, roughness, and WVTR were studied. The WVTR value of the optimum barrier structure (parylene+3 pairs of SiOx/SiNx) could reduce to 4.74×10-5g/m2/day after bending for 1000 times under a resistivity test (25°C and 90% relative humidity). This result indicated that permeation barrier films prepared by ICPCVD could be a promising candidate for flexible electronic applications.

Original languageEnglish
Pages (from-to)4267-4273
Number of pages7
JournalSurface and Coatings Technology
Volume205
Issue number17-18
DOIs
StatePublished - 25 May 2011

Keywords

  • ICPCVD
  • Permeation
  • Polycarbonate
  • Silicon nitride
  • Silicon oxide

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