Performance of Transparent Indium–Gallium–Zinc Oxide Thin Film Transistor Prepared by All Plasma Enhanced Atomic Layer Deposition

Qi Zhen Chen, Chun Yan Shi, Ming Jie Zhao, Peng Gao, Wan Yu Wu, Dong Sing Wuu, Ray Hua Horng, Shui Yang Lien, Wen Zhang Zhu

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Transparent indium–gallium–zinc oxide thin film transistor (IGZO-TFT) prepared by all plasma enhanced atomic layer deposition (PEALD) has been firstly investigated. As the chemical composition has a considerable impact on the performance of IGZO TFTs, the properties of IGZO film and IGZO-TFT based on different In2O3 cycle ratios are investigated. The IGZO film prepared by PEALD shows amorphous state with excellent conformity and uniformity. Moreover, the a-IGZO films with different In2O3 cycle ratios are applied to TFT fabrication. When the a-IGZO thin film with 35% In2O3 cycle ratios, the transistor presents satisfactory electrical performance with a threshold voltage (Vth) of 1.7 V, a saturation mobility (μsat) of 8.8 cm2/Vs, a subthreshold swing (SS) of 0.2 V/decade and an Ion/Ioff of 2.2×108. This work provides a new way to achieve transparent TFT which better for practical commercial applications.

Original languageEnglish
Pages (from-to)1
Number of pages1
JournalIeee Electron Device Letters
DOIs
StateAccepted/In press - 2023

Keywords

  • amorphous
  • Gallium
  • IGZO
  • II-VI semiconductor materials
  • Indium
  • PEALD
  • Plasmas
  • Substrates
  • TFT
  • Thin film transistors
  • transparent
  • Zinc oxide

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