Performance of Transparent Indium-Gallium-Zinc Oxide Thin Film Transistor Prepared by All Plasma Enhanced Atomic Layer Deposition

Qi Zhen Chen; Chun Yan Shi; Ming Jie Zhao; Peng Gao; Wan Yu Wu; Dong Sing Wuu; Ray Hua Horng; Shui Yang Lien; Wen Zhang Zhu

doi:10.1109/LED.2023.3239379

Performance of Transparent Indium-Gallium-Zinc Oxide Thin Film Transistor Prepared by All Plasma Enhanced Atomic Layer Deposition

Qi Zhen Chen, Chun Yan Shi, Ming Jie Zhao, Peng Gao, Wan Yu Wu, Dong Sing Wuu, Ray Hua Horng^*, Shui Yang Lien^*, Wen Zhang Zhu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Transparent indium-gallium-zinc oxide thin film transistor (IGZO-TFT) prepared by all plasma enhanced atomic layer deposition (PEALD) has been firstly investigated. As the chemical composition has a considerable impact on the performance of IGZO TFTs, the properties of IGZO film and IGZO-TFT based on different In2O3 cycle ratios are investigated. The IGZO film prepared by PEALD shows amorphous state with excellent conformity and uniformity. Moreover, the a-IGZO films with different In2O3 cycle ratios are applied to TFT fabrication. When the a-IGZO thin film with 35% In2O3 cycle ratios, the transistor presents satisfactory electrical performance with a threshold voltage ( V th ) of 1.7 V, a saturation mobility ( μ sat ) of 8.8 cm2/Vs, a subthreshold swing (SS) of 0.2 V/decade and an ION/IOFF of 2.2× 108. This work provides a new way to achieve transparent TFT which better for practical commercial applications.

Original language	English
Pages (from-to)	448-451
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	44
Issue number	3
DOIs	https://doi.org/10.1109/LED.2023.3239379
State	Published - 1 Mar 2023

Keywords

IGZO
PEALD
TFT
amorphous
transparent

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10.1109/LED.2023.3239379

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@article{818af9e8da8d4ae5a7fff6b0c723484e,

title = "Performance of Transparent Indium-Gallium-Zinc Oxide Thin Film Transistor Prepared by All Plasma Enhanced Atomic Layer Deposition",

abstract = "Transparent indium-gallium-zinc oxide thin film transistor (IGZO-TFT) prepared by all plasma enhanced atomic layer deposition (PEALD) has been firstly investigated. As the chemical composition has a considerable impact on the performance of IGZO TFTs, the properties of IGZO film and IGZO-TFT based on different In2O3 cycle ratios are investigated. The IGZO film prepared by PEALD shows amorphous state with excellent conformity and uniformity. Moreover, the a-IGZO films with different In2O3 cycle ratios are applied to TFT fabrication. When the a-IGZO thin film with 35% In2O3 cycle ratios, the transistor presents satisfactory electrical performance with a threshold voltage ( V th ) of 1.7 V, a saturation mobility ( μ sat ) of 8.8 cm2/Vs, a subthreshold swing (SS) of 0.2 V/decade and an ION/IOFF of 2.2× 108. This work provides a new way to achieve transparent TFT which better for practical commercial applications.",

keywords = "IGZO, PEALD, TFT, amorphous, transparent",

author = "Chen, {Qi Zhen} and Shi, {Chun Yan} and Zhao, {Ming Jie} and Peng Gao and Wu, {Wan Yu} and Wuu, {Dong Sing} and Horng, {Ray Hua} and Lien, {Shui Yang} and Zhu, {Wen Zhang}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2023",

month = mar,

day = "1",

doi = "10.1109/LED.2023.3239379",

language = "English",

volume = "44",

pages = "448--451",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Performance of Transparent Indium-Gallium-Zinc Oxide Thin Film Transistor Prepared by All Plasma Enhanced Atomic Layer Deposition

AU - Chen, Qi Zhen

AU - Shi, Chun Yan

AU - Zhao, Ming Jie

AU - Gao, Peng

AU - Wu, Wan Yu

AU - Wuu, Dong Sing

AU - Horng, Ray Hua

AU - Lien, Shui Yang

AU - Zhu, Wen Zhang

PY - 2023/3/1

Y1 - 2023/3/1

N2 - Transparent indium-gallium-zinc oxide thin film transistor (IGZO-TFT) prepared by all plasma enhanced atomic layer deposition (PEALD) has been firstly investigated. As the chemical composition has a considerable impact on the performance of IGZO TFTs, the properties of IGZO film and IGZO-TFT based on different In2O3 cycle ratios are investigated. The IGZO film prepared by PEALD shows amorphous state with excellent conformity and uniformity. Moreover, the a-IGZO films with different In2O3 cycle ratios are applied to TFT fabrication. When the a-IGZO thin film with 35% In2O3 cycle ratios, the transistor presents satisfactory electrical performance with a threshold voltage ( V th ) of 1.7 V, a saturation mobility ( μ sat ) of 8.8 cm2/Vs, a subthreshold swing (SS) of 0.2 V/decade and an ION/IOFF of 2.2× 108. This work provides a new way to achieve transparent TFT which better for practical commercial applications.

AB - Transparent indium-gallium-zinc oxide thin film transistor (IGZO-TFT) prepared by all plasma enhanced atomic layer deposition (PEALD) has been firstly investigated. As the chemical composition has a considerable impact on the performance of IGZO TFTs, the properties of IGZO film and IGZO-TFT based on different In2O3 cycle ratios are investigated. The IGZO film prepared by PEALD shows amorphous state with excellent conformity and uniformity. Moreover, the a-IGZO films with different In2O3 cycle ratios are applied to TFT fabrication. When the a-IGZO thin film with 35% In2O3 cycle ratios, the transistor presents satisfactory electrical performance with a threshold voltage ( V th ) of 1.7 V, a saturation mobility ( μ sat ) of 8.8 cm2/Vs, a subthreshold swing (SS) of 0.2 V/decade and an ION/IOFF of 2.2× 108. This work provides a new way to achieve transparent TFT which better for practical commercial applications.

KW - IGZO

KW - PEALD

KW - TFT

KW - amorphous

KW - transparent

UR - http://www.scopus.com/inward/record.url?scp=85147259986&partnerID=8YFLogxK

U2 - 10.1109/LED.2023.3239379

DO - 10.1109/LED.2023.3239379

M3 - Article

AN - SCOPUS:85147259986

SN - 0741-3106

VL - 44

SP - 448

EP - 451

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 3

ER -

Performance of Transparent Indium-Gallium-Zinc Oxide Thin Film Transistor Prepared by All Plasma Enhanced Atomic Layer Deposition

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