Performance improvement of InGaAsN/GaAs quantum well lasers by using trimethylantimony preflow

Hsin-Chieh Yu; Cheng Tien Wan; Wei Cheng Chen; Wei Chou Hsu; Ke Hua Su; Chun Yuan Huang; Yan Kuin Su

doi:10.1143/APEX.4.012103

Performance improvement of InGaAsN/GaAs quantum well lasers by using trimethylantimony preflow

Hsin-Chieh Yu^*, Cheng Tien Wan, Wei Cheng Chen, Wei Chou Hsu, Ke Hua Su, Chun Yuan Huang, Yan Kuin Su

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The performance characteristics of InGaAsN quantum well (QW) lasers with and without trimethylantimony (TMSb) preflow have been studied. The TMSb preflow before the growth of InGaAsN QWs can suppress the Al-contamination effect and decrease the threshold current density compared with conventional InGaAsN QW lasers without preflow. The photoluminescence (PL) intensity increased and linewidth decreased when TMSb flow rate increased. According to the atomic force microscopy (AFM) measurement, the surface roughness was also reduced significantly after TMSb treatment which manifested that the preflow prevented the Al and N precursors from reacting with each other and resulted in a higher optical quality in InGaAsN QWs.

Original language	English
Article number	012103
Journal	Applied Physics Express
Volume	4
Issue number	1
DOIs	https://doi.org/10.1143/APEX.4.012103
State	Published - 1 Jan 2011

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title = "Performance improvement of InGaAsN/GaAs quantum well lasers by using trimethylantimony preflow",

abstract = "The performance characteristics of InGaAsN quantum well (QW) lasers with and without trimethylantimony (TMSb) preflow have been studied. The TMSb preflow before the growth of InGaAsN QWs can suppress the Al-contamination effect and decrease the threshold current density compared with conventional InGaAsN QW lasers without preflow. The photoluminescence (PL) intensity increased and linewidth decreased when TMSb flow rate increased. According to the atomic force microscopy (AFM) measurement, the surface roughness was also reduced significantly after TMSb treatment which manifested that the preflow prevented the Al and N precursors from reacting with each other and resulted in a higher optical quality in InGaAsN QWs.",

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AU - Yu, Hsin-Chieh

AU - Wan, Cheng Tien

AU - Chen, Wei Cheng

AU - Hsu, Wei Chou

AU - Su, Ke Hua

AU - Huang, Chun Yuan

AU - Su, Yan Kuin

PY - 2011/1/1

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N2 - The performance characteristics of InGaAsN quantum well (QW) lasers with and without trimethylantimony (TMSb) preflow have been studied. The TMSb preflow before the growth of InGaAsN QWs can suppress the Al-contamination effect and decrease the threshold current density compared with conventional InGaAsN QW lasers without preflow. The photoluminescence (PL) intensity increased and linewidth decreased when TMSb flow rate increased. According to the atomic force microscopy (AFM) measurement, the surface roughness was also reduced significantly after TMSb treatment which manifested that the preflow prevented the Al and N precursors from reacting with each other and resulted in a higher optical quality in InGaAsN QWs.

AB - The performance characteristics of InGaAsN quantum well (QW) lasers with and without trimethylantimony (TMSb) preflow have been studied. The TMSb preflow before the growth of InGaAsN QWs can suppress the Al-contamination effect and decrease the threshold current density compared with conventional InGaAsN QW lasers without preflow. The photoluminescence (PL) intensity increased and linewidth decreased when TMSb flow rate increased. According to the atomic force microscopy (AFM) measurement, the surface roughness was also reduced significantly after TMSb treatment which manifested that the preflow prevented the Al and N precursors from reacting with each other and resulted in a higher optical quality in InGaAsN QWs.

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VL - 4

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Performance improvement of InGaAsN/GaAs quantum well lasers by using trimethylantimony preflow

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