Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation

Jian Hao Chen*, Tzung Bin Huang, Xiaohua Wu, Dolf Landheer, Tan Fu Lei, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N2+, ion implantation of N+, and N2 O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2 O -plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples.

Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number1
StatePublished - 1 Jan 2007


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