Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation

Jian Hao Chen; Tzung Bin Huang; Xiaohua Wu; Dolf Landheer; Tan Fu Lei; Tien-Sheng Chao

doi:10.1149/1.2388733

Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation

Jian Hao Chen^*, Tzung Bin Huang, Xiaohua Wu, Dolf Landheer, Tan Fu Lei, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N2+, ion implantation of N+, and N2 O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2 O -plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples.

Original language	English
Journal	Journal of the Electrochemical Society
Volume	154
Issue number	1
DOIs	https://doi.org/10.1149/1.2388733
State	Published - 1 Jan 2007

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abstract = "In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N2+, ion implantation of N+, and N2 O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2 O -plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples.",

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AU - Chen, Jian Hao

AU - Huang, Tzung Bin

AU - Wu, Xiaohua

AU - Landheer, Dolf

AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

PY - 2007/1/1

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N2 - In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N2+, ion implantation of N+, and N2 O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2 O -plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples.

AB - In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N2+, ion implantation of N+, and N2 O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2 O -plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples.

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Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation

Abstract

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