Performance improvement for high mobility amorphous indium-zinc-tin-oxide thin-film transistors

Chur Shyang Fuh; Po-Tsun Liu; Yang Shun Fan; Chih Hsiang Chang; Che Chia Chang

doi:10.1002/j.2168-0159.2014.tb00264.x

Performance improvement for high mobility amorphous indium-zinc-tin-oxide thin-film transistors

Chur Shyang Fuh, Po-Tsun Liu^*, Yang Shun Fan, Chih Hsiang Chang, Che Chia Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this work, the relation between post annealing temperature and electrical characteristic on high mobility a-IZTO TFTs was investigated. The 400°C-annealed a-IZTO TFTs exhibited a better performance with field effect mobility of 39.6 cm ² /Vs, V _th of -2.8 V and sub-threshold swing of 0.25 V/decade. Both shallow trap states of a-IZTO film and interface trap states at the a-IZTO/SiO ₂ interface decreased to 2.16 × 10 ¹⁷ cm ^-3 eV ^-1 and 4.38 × 10 ¹² cm ^-2 eV ^-1 , respectively with 400°C annealing. Owing to the higher energy from annealing process, the structural relaxation can be enhanced leading a better electrical characteristic of a-IZTO TFTs.

Original language	English
Pages (from-to)	1017-1020
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	45
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2014.tb00264.x
State	Published - 1 Jan 2014

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title = "Performance improvement for high mobility amorphous indium-zinc-tin-oxide thin-film transistors",

abstract = " In this work, the relation between post annealing temperature and electrical characteristic on high mobility a-IZTO TFTs was investigated. The 400°C-annealed a-IZTO TFTs exhibited a better performance with field effect mobility of 39.6 cm 2 /Vs, V th of -2.8 V and sub-threshold swing of 0.25 V/decade. Both shallow trap states of a-IZTO film and interface trap states at the a-IZTO/SiO 2 interface decreased to 2.16 × 10 17 cm -3 eV -1 and 4.38 × 10 12 cm -2 eV -1 , respectively with 400°C annealing. Owing to the higher energy from annealing process, the structural relaxation can be enhanced leading a better electrical characteristic of a-IZTO TFTs.",

author = "Fuh, {Chur Shyang} and Po-Tsun Liu and Fan, {Yang Shun} and Chang, {Chih Hsiang} and Chang, {Che Chia}",

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T1 - Performance improvement for high mobility amorphous indium-zinc-tin-oxide thin-film transistors

AU - Fuh, Chur Shyang

AU - Liu, Po-Tsun

AU - Fan, Yang Shun

AU - Chang, Chih Hsiang

AU - Chang, Che Chia

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In this work, the relation between post annealing temperature and electrical characteristic on high mobility a-IZTO TFTs was investigated. The 400°C-annealed a-IZTO TFTs exhibited a better performance with field effect mobility of 39.6 cm 2 /Vs, V th of -2.8 V and sub-threshold swing of 0.25 V/decade. Both shallow trap states of a-IZTO film and interface trap states at the a-IZTO/SiO 2 interface decreased to 2.16 × 10 17 cm -3 eV -1 and 4.38 × 10 12 cm -2 eV -1 , respectively with 400°C annealing. Owing to the higher energy from annealing process, the structural relaxation can be enhanced leading a better electrical characteristic of a-IZTO TFTs.

AB - In this work, the relation between post annealing temperature and electrical characteristic on high mobility a-IZTO TFTs was investigated. The 400°C-annealed a-IZTO TFTs exhibited a better performance with field effect mobility of 39.6 cm 2 /Vs, V th of -2.8 V and sub-threshold swing of 0.25 V/decade. Both shallow trap states of a-IZTO film and interface trap states at the a-IZTO/SiO 2 interface decreased to 2.16 × 10 17 cm -3 eV -1 and 4.38 × 10 12 cm -2 eV -1 , respectively with 400°C annealing. Owing to the higher energy from annealing process, the structural relaxation can be enhanced leading a better electrical characteristic of a-IZTO TFTs.

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Performance improvement for high mobility amorphous indium-zinc-tin-oxide thin-film transistors

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