Abstract
In this work, the relation between post annealing temperature and electrical characteristic on high mobility a-IZTO TFTs was investigated. The 400°C-annealed a-IZTO TFTs exhibited a better performance with field effect mobility of 39.6 cm2/Vs, Vth of -2.8 V and sub-threshold swing of 0.25 V/decade. Both shallow trap states of a-IZTO film and interface trap states at the a-IZTO/SiO2 interface decreased to 2.16 × 1017 cm-3eV-1 and 4.38 × 1012 cm-2eV-1, respectively with 400°C annealing. Owing to the higher energy from annealing process, the structural relaxation can be enhanced leading a better electrical characteristic of a-IZTO TFTs.
Original language | English |
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Pages (from-to) | 1017-1020 |
Number of pages | 4 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 45 |
Issue number | 1 |
DOIs | |
State | Published - Jun 2014 |