Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment

Dun Bao Ruan, Kuei Shu Chang-Liao*, Chih Wei Liu, Yao Jen Lee, Yu Hsuan Chien, Bo Lien Kuo, Yu Chuan Chiu, Kai Jhih Gan, Chih Chieh Hsu, Po Tsun Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Performance improvement on Ge nFinFET, pFinFET and CMOS inverter can be achieved by using a novel low temperature damage-free supercritical phase fluid (SCF) treatment. Thanks to effective reduction of unstable oxidation states, oxygen vacancies and interface traps, higher on-off current ratios (8 × 105 for pFinFET and 3.3 × 105 for nFinFET), lower S.S. (72 mV/dec), higher on current (>45% improvement) and better reliability in Ge FinFETs are achieved with a SCF treatment as compared with a remote plasma post-oxidation (PPO) one. Besides, a higher voltage gain (88 V/V) of Ge FinFET CMOS inverter is obtained with a SCF treatment in comparison with a remote PPO one.

Original languageEnglish
Pages (from-to)838-841
Number of pages4
JournalIeee Electron Device Letters
Issue number6
StatePublished - 1 Jun 2022


  • CMOS inverter
  • Ge FinFET
  • oxidation state
  • plasma post-oxidation
  • supercritical fluid treatment


Dive into the research topics of 'Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment'. Together they form a unique fingerprint.

Cite this