Performance Evaluation of AFeRAM under Low Temperature Operation

Yi Chuan Chen; Yu Chen Chen; Kuo Yu Hsiang; Min Hung Lee; Pin Su

doi:10.1109/EDTM55494.2023.10103076

Performance Evaluation of AFeRAM under Low Temperature Operation

Yi Chuan Chen, Yu Chen Chen, Kuo Yu Hsiang, Min Hung Lee, Pin Su

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO (Hf0.1 Zr 0.9 O2) experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.

Original language	English
Title of host publication	7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10103076
State	Published - 2023
Event	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: 7 Mar 2023 → 10 Mar 2023

Publication series

Name	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/Territory	Korea, Republic of
City	Seoul
Period	7/03/23 → 10/03/23

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/EDTM55494.2023.10103076

Cite this

Chen, Y. C., Chen, Y. C., Hsiang, K. Y., Lee, M. H., & Su, P. (2023). Performance Evaluation of AFeRAM under Low Temperature Operation. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10103076

Chen, Yi Chuan ; Chen, Yu Chen ; Hsiang, Kuo Yu et al. / Performance Evaluation of AFeRAM under Low Temperature Operation. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

@inproceedings{7d7c022e8ab541da8a1ad1ca1e11ee6d,

title = "Performance Evaluation of AFeRAM under Low Temperature Operation",

abstract = "In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO (Hf0.1 Zr 0.9 O2) experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.",

author = "Chen, {Yi Chuan} and Chen, {Yu Chen} and Hsiang, {Kuo Yu} and Lee, {Min Hung} and Pin Su",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",

year = "2023",

doi = "10.1109/EDTM55494.2023.10103076",

language = "English",

series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",

address = "美國",

}

Chen, YC, Chen, YC, Hsiang, KY, Lee, MH & Su, P 2023, Performance Evaluation of AFeRAM under Low Temperature Operation. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, Korea, Republic of, 7/03/23. https://doi.org/10.1109/EDTM55494.2023.10103076

Performance Evaluation of AFeRAM under Low Temperature Operation. / Chen, Yi Chuan; Chen, Yu Chen; Hsiang, Kuo Yu et al.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Performance Evaluation of AFeRAM under Low Temperature Operation

AU - Chen, Yi Chuan

AU - Chen, Yu Chen

AU - Hsiang, Kuo Yu

AU - Lee, Min Hung

AU - Su, Pin

PY - 2023

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N2 - In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO (Hf0.1 Zr 0.9 O2) experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.

AB - In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO (Hf0.1 Zr 0.9 O2) experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.

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DO - 10.1109/EDTM55494.2023.10103076

M3 - Conference contribution

AN - SCOPUS:85158088819

T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

BT - 7th IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023

Y2 - 7 March 2023 through 10 March 2023

ER -

Chen YC, Chen YC, Hsiang KY, Lee MH, Su P. Performance Evaluation of AFeRAM under Low Temperature Operation. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10103076

Performance Evaluation of AFeRAM under Low Temperature Operation

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