Abstract
Poly-SiGe- and poly-Si-gated N/PMOS devices with physical channel lengths down to 0.1μm and gate oxide thicknesses down to 25 angstrom were fabricated. Device performance and reliability were characterized. The poly-SiGe-gated NMOS and PMOS devices provide superior current drive due to less gate-depletion effect and higher inversion hole mobility in poly-SiGe-gated devices. In addition, gate oxide integrity in poly-SiGe-gated MOSFET is as good as poly-Si-gated device. Poly-SiGe-gated PMOSFET has better reliability than poly-Si-gated PMOSFET due to reduction of boron penetration.
Original language | English |
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Pages (from-to) | 14-18 |
Number of pages | 5 |
Journal | International Symposium on VLSI Technology, Systems, and Applications, Proceedings |
DOIs | |
State | Published - 1999 |
Event | Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan Duration: 7 Jun 1999 → 10 Jun 1999 |