Performance enhancement in deep-submicron poly-SiGe-gated CMOS devices

Wen Chin Lee*, Tsu Jae King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Poly-SiGe- and poly-Si-gated N/PMOS devices with physical channel lengths down to 0.1μm and gate oxide thicknesses down to 25 angstrom were fabricated. Device performance and reliability were characterized. The poly-SiGe-gated NMOS and PMOS devices provide superior current drive due to less gate-depletion effect and higher inversion hole mobility in poly-SiGe-gated devices. In addition, gate oxide integrity in poly-SiGe-gated MOSFET is as good as poly-Si-gated device. Poly-SiGe-gated PMOSFET has better reliability than poly-Si-gated PMOSFET due to reduction of boron penetration.

Original languageEnglish
Pages (from-to)14-18
Number of pages5
JournalInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
DOIs
StatePublished - 1 Jan 1999
EventProceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan
Duration: 7 Jun 199910 Jun 1999

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