TY - JOUR
T1 - Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems
AU - Ruan, Dun Bao
AU - Liu, Po-Tsun
AU - Yu, Min Chin
AU - Chien, Ta Chun
AU - Chiu, Yu Chuan
AU - Gan, Kai Jhih
AU - Sze, Simon M.
PY - 2019/6/3
Y1 - 2019/6/3
N2 - In this study, hydrogen peroxide (H2O2) cosolvent, which was dissolved into supercritical-phase carbon dioxide fluid (SCCO2), is employed to passivate excessive oxygen vacancies of the high-mobility tungsten-doped indium oxide without any essential thermal process. With the detailed material analysis, the internal physical mechanism of the cosolvent effect or the interaction between the cosolvent solution and supercritical-phase fluid is well discussed. In addition, the optimized result has been applied for the thin film transistor device fabrication. As a result, the device with SCCO2 + H2O2 treatment exhibits the lowest subthreshold swing of 82 mV/dec, the lowest interface trap density of 8.76 × 1011 eV-1 cm-2, the lowest hysteresis of 47 mV, and an excellent reliability and uniformity characteristic compared with any other control groups. Besides, an extremely high field-effect mobility of 98.91 cm2/V s can also be observed, while there is even a desirable positive shift for the threshold voltage. Notably, compared with the untreated sample, the highest on/off current ratio of 5.11 × 107 can be achieved with at least four orders of magnitude enhancement by this unique treatment.
AB - In this study, hydrogen peroxide (H2O2) cosolvent, which was dissolved into supercritical-phase carbon dioxide fluid (SCCO2), is employed to passivate excessive oxygen vacancies of the high-mobility tungsten-doped indium oxide without any essential thermal process. With the detailed material analysis, the internal physical mechanism of the cosolvent effect or the interaction between the cosolvent solution and supercritical-phase fluid is well discussed. In addition, the optimized result has been applied for the thin film transistor device fabrication. As a result, the device with SCCO2 + H2O2 treatment exhibits the lowest subthreshold swing of 82 mV/dec, the lowest interface trap density of 8.76 × 1011 eV-1 cm-2, the lowest hysteresis of 47 mV, and an excellent reliability and uniformity characteristic compared with any other control groups. Besides, an extremely high field-effect mobility of 98.91 cm2/V s can also be observed, while there is even a desirable positive shift for the threshold voltage. Notably, compared with the untreated sample, the highest on/off current ratio of 5.11 × 107 can be achieved with at least four orders of magnitude enhancement by this unique treatment.
KW - HO interface treatment
KW - cosolvent effect
KW - high-mobility thin film transistor
KW - multilayer high κ insulator
KW - room-temperature supercritical CO fluid
KW - tungsten-doped indium oxide
UR - http://www.scopus.com/inward/record.url?scp=85068170388&partnerID=8YFLogxK
U2 - 10.1021/acsami.9b04257
DO - 10.1021/acsami.9b04257
M3 - Article
C2 - 31190532
AN - SCOPUS:85068170388
SN - 1944-8244
VL - 11
SP - 22521
EP - 22530
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 25
ER -