Performance enhancement for strained HfCO2 nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement

Woei Cherng Wu; Tien-Sheng Chao; Te Hsin Chiu; Jer Chyi Wang; Chao Sung Lai; Ma Ming-Wen; Wen Cheng Lo; Yi Hsun Ho

doi:10.1109/EDSSC.2007.4450087

Performance enhancement for strained HfCO₂ nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement

Woei Cherng Wu^*, Tien-Sheng Chao, Te Hsin Chiu, Jer Chyi Wang, Chao Sung Lai, Ma Ming-Wen, Wen Cheng Lo, Yi Hsun Ho

^*Corresponding author for this work

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

High-performance CESL strained nMOSFET with HfO₂ gate dielectrics has been successfully demonstrated in this work. It is found that, the transconductance (gm) and driving current (I_on) of the nMOSFETs increase 70% and 90%, respectively, of the increase of devices with a 300 nm capping nitride layer. A superior HfO₂/Si interface for CESL-devices is observed, demonstrated by an obvious interface state density reduction (6.56×10¹¹ to 9.85×l0¹⁰ cm^-2). Further, a roughly 50% and 60% increase of g_m and I_on; respectively, can be achieved for the 300 nm SiN-capped HfO₂ nMOSFET without considering charge trapping under pulsed-IV measurement.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	161-164
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450087
State	Published - 2007
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 20 Dec 2007 → 22 Dec 2007

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Conference

Conference	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country/Territory	Taiwan
City	Tainan
Period	20/12/07 → 22/12/07

Access to Document

10.1109/EDSSC.2007.4450087

Cite this

Wu, W. C., Chao, T.-S., Chiu, T. H., Wang, J. C., Lai, C. S., Ming-Wen, M., Lo, W. C., & Ho, Y. H. (2007). Performance enhancement for strained HfCO₂ nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 161-164). Article 4450087 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450087

@inproceedings{330c12e438f54bbe8f3aae69367b634b,

title = "Performance enhancement for strained HfCO2 nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement",

abstract = "High-performance CESL strained nMOSFET with HfO2 gate dielectrics has been successfully demonstrated in this work. It is found that, the transconductance (gm) and driving current (Ion) of the nMOSFETs increase 70% and 90%, respectively, of the increase of devices with a 300 nm capping nitride layer. A superior HfO2/Si interface for CESL-devices is observed, demonstrated by an obvious interface state density reduction (6.56×1011 to 9.85×l010 cm-2). Further, a roughly 50% and 60% increase of gm and Ion; respectively, can be achieved for the 300 nm SiN-capped HfO2 nMOSFET without considering charge trapping under pulsed-IV measurement.",

author = "Wu, {Woei Cherng} and Tien-Sheng Chao and Chiu, {Te Hsin} and Wang, {Jer Chyi} and Lai, {Chao Sung} and Ma Ming-Wen and Lo, {Wen Cheng} and Ho, {Yi Hsun}",

year = "2007",

doi = "10.1109/EDSSC.2007.4450087",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "161--164",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Wu, WC, Chao, T-S, Chiu, TH, Wang, JC, Lai, CS, Ming-Wen, M, Lo, WC & Ho, YH 2007, Performance enhancement for strained HfCO₂ nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450087, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 161-164, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 20/12/07. https://doi.org/10.1109/EDSSC.2007.4450087

Performance enhancement for strained HfCO₂ nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement. / Wu, Woei Cherng; Chao, Tien-Sheng; Chiu, Te Hsin et al.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 161-164 4450087 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Wu, Woei Cherng

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AU - Chiu, Te Hsin

AU - Wang, Jer Chyi

AU - Lai, Chao Sung

AU - Ming-Wen, Ma

AU - Lo, Wen Cheng

AU - Ho, Yi Hsun

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AB - High-performance CESL strained nMOSFET with HfO2 gate dielectrics has been successfully demonstrated in this work. It is found that, the transconductance (gm) and driving current (Ion) of the nMOSFETs increase 70% and 90%, respectively, of the increase of devices with a 300 nm capping nitride layer. A superior HfO2/Si interface for CESL-devices is observed, demonstrated by an obvious interface state density reduction (6.56×1011 to 9.85×l010 cm-2). Further, a roughly 50% and 60% increase of gm and Ion; respectively, can be achieved for the 300 nm SiN-capped HfO2 nMOSFET without considering charge trapping under pulsed-IV measurement.

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Wu WC, Chao TS, Chiu TH, Wang JC, Lai CS, Ming-Wen M et al. Performance enhancement for strained HfCO₂ nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 161-164. 4450087. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). doi: 10.1109/EDSSC.2007.4450087