Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction: A Theoretical Study

Hsin Hui Huang, Yueh Hua Chu, Tzu Yun Wu, Ming Hung Wu, I. Ting Wang, Tuo Hung Hou

Research output: Contribution to journalArticlepeer-review

Abstract

A comprehensive physical model is established to understand the device operation and optimization strategy of the ferroelectric tunnel junction (FTJ). This model is capable of simulating write (switching polarity), read tunnel electroresistance (TER), and ac transient operations with a good agreement with experiments. The strategy of optimizing the thickness of the ferroelectric layer and nonpolar interfacial layer is discussed for enlarging TER ratio. We also discussed the possible misinterpretation of the measured TER ratio according to our model.

Original languageEnglish
Pages (from-to)1-7
Number of pages7
JournalIEEE Transactions on Electron Devices
DOIs
StateAccepted/In press - 2022

Keywords

  • Current measurement
  • Electric potential
  • Ferroelectric tunnel junctions (FTJ)
  • Iron
  • modelling
  • Nonvolatile memory
  • Switches
  • tunnel electroresistance (TER)
  • Tunneling
  • Voltage

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