Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction: A Theoretical Study

Hsin Hui Huang; Yueh Hua Chu; Tzu Yun Wu; Ming Hung Wu; I. Ting Wang; Tuo Hung Hou

doi:10.1109/TED.2022.3184654

Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction: A Theoretical Study

Hsin Hui Huang, Yueh Hua Chu, Tzu Yun Wu, Ming Hung Wu, I. Ting Wang^*, Tuo Hung Hou^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A comprehensive physical model is established to understand the device operation and optimization strategy of the ferroelectric tunnel junction (FTJ). This model is capable of simulating write (switching polarity), read [tunnel electroresistance (TER)], and ac transient operations with a good agreement with experiments. The strategy of optimizing the thickness of the ferroelectric layer and nonpolar interfacial layer is discussed for enlarging TER ratio. We also discussed the possible misinterpretation of the measured TER ratio according to our model.

Original language	English
Pages (from-to)	4686-4692
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	69
Issue number	8
DOIs	https://doi.org/10.1109/TED.2022.3184654
State	Published - 1 Aug 2022

Keywords

Ferroelectric tunnel junctions (FTJ)
modelling
tunnel electroresistance (TER)

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title = "Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction: A Theoretical Study",

abstract = "A comprehensive physical model is established to understand the device operation and optimization strategy of the ferroelectric tunnel junction (FTJ). This model is capable of simulating write (switching polarity), read [tunnel electroresistance (TER)], and ac transient operations with a good agreement with experiments. The strategy of optimizing the thickness of the ferroelectric layer and nonpolar interfacial layer is discussed for enlarging TER ratio. We also discussed the possible misinterpretation of the measured TER ratio according to our model.",

keywords = "Ferroelectric tunnel junctions (FTJ), modelling, tunnel electroresistance (TER)",

author = "Huang, {Hsin Hui} and Chu, {Yueh Hua} and Wu, {Tzu Yun} and Wu, {Ming Hung} and Wang, {I. Ting} and Hou, {Tuo Hung}",

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T1 - Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction

T2 - A Theoretical Study

AU - Huang, Hsin Hui

AU - Chu, Yueh Hua

AU - Wu, Tzu Yun

AU - Wu, Ming Hung

AU - Wang, I. Ting

AU - Hou, Tuo Hung

PY - 2022/8/1

Y1 - 2022/8/1

N2 - A comprehensive physical model is established to understand the device operation and optimization strategy of the ferroelectric tunnel junction (FTJ). This model is capable of simulating write (switching polarity), read [tunnel electroresistance (TER)], and ac transient operations with a good agreement with experiments. The strategy of optimizing the thickness of the ferroelectric layer and nonpolar interfacial layer is discussed for enlarging TER ratio. We also discussed the possible misinterpretation of the measured TER ratio according to our model.

AB - A comprehensive physical model is established to understand the device operation and optimization strategy of the ferroelectric tunnel junction (FTJ). This model is capable of simulating write (switching polarity), read [tunnel electroresistance (TER)], and ac transient operations with a good agreement with experiments. The strategy of optimizing the thickness of the ferroelectric layer and nonpolar interfacial layer is discussed for enlarging TER ratio. We also discussed the possible misinterpretation of the measured TER ratio according to our model.

KW - Ferroelectric tunnel junctions (FTJ)

KW - modelling

KW - tunnel electroresistance (TER)

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SP - 4686

EP - 4692

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction: A Theoretical Study

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