Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction: A Theoretical Study

Hsin Hui Huang; Yueh Hua Chu; Tzu Yun Wu; Ming Hung Wu; I. Ting Wang; Tuo Hung Hou

doi:10.1109/TED.2022.3184654

Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction: A Theoretical Study

Hsin Hui Huang, Yueh Hua Chu, Tzu Yun Wu, Ming Hung Wu, I. Ting Wang, Tuo Hung Hou

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A comprehensive physical model is established to understand the device operation and optimization strategy of the ferroelectric tunnel junction (FTJ). This model is capable of simulating write (switching polarity), read tunnel electroresistance (TER), and ac transient operations with a good agreement with experiments. The strategy of optimizing the thickness of the ferroelectric layer and nonpolar interfacial layer is discussed for enlarging TER ratio. We also discussed the possible misinterpretation of the measured TER ratio according to our model.

Original language	English
Pages (from-to)	1-7
Number of pages	7
Journal	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2022.3184654
State	Accepted/In press - 2022

Keywords

Current measurement
Electric potential
Ferroelectric tunnel junctions (FTJ)
Iron
modelling
Nonvolatile memory
Switches
tunnel electroresistance (TER)
Tunneling
Voltage

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10.1109/TED.2022.3184654

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title = "Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction: A Theoretical Study",

abstract = "A comprehensive physical model is established to understand the device operation and optimization strategy of the ferroelectric tunnel junction (FTJ). This model is capable of simulating write (switching polarity), read tunnel electroresistance (TER), and ac transient operations with a good agreement with experiments. The strategy of optimizing the thickness of the ferroelectric layer and nonpolar interfacial layer is discussed for enlarging TER ratio. We also discussed the possible misinterpretation of the measured TER ratio according to our model.",

keywords = "Current measurement, Electric potential, Ferroelectric tunnel junctions (FTJ), Iron, modelling, Nonvolatile memory, Switches, tunnel electroresistance (TER), Tunneling, Voltage",

author = "Huang, {Hsin Hui} and Chu, {Yueh Hua} and Wu, {Tzu Yun} and Wu, {Ming Hung} and Wang, {I. Ting} and Hou, {Tuo Hung}",

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T1 - Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction

T2 - A Theoretical Study

AU - Huang, Hsin Hui

AU - Chu, Yueh Hua

AU - Wu, Tzu Yun

AU - Wu, Ming Hung

AU - Wang, I. Ting

AU - Hou, Tuo Hung

N1 - Publisher Copyright: IEEE

PY - 2022

Y1 - 2022

N2 - A comprehensive physical model is established to understand the device operation and optimization strategy of the ferroelectric tunnel junction (FTJ). This model is capable of simulating write (switching polarity), read tunnel electroresistance (TER), and ac transient operations with a good agreement with experiments. The strategy of optimizing the thickness of the ferroelectric layer and nonpolar interfacial layer is discussed for enlarging TER ratio. We also discussed the possible misinterpretation of the measured TER ratio according to our model.

AB - A comprehensive physical model is established to understand the device operation and optimization strategy of the ferroelectric tunnel junction (FTJ). This model is capable of simulating write (switching polarity), read tunnel electroresistance (TER), and ac transient operations with a good agreement with experiments. The strategy of optimizing the thickness of the ferroelectric layer and nonpolar interfacial layer is discussed for enlarging TER ratio. We also discussed the possible misinterpretation of the measured TER ratio according to our model.

KW - Current measurement

KW - Electric potential

KW - Ferroelectric tunnel junctions (FTJ)

KW - Iron

KW - modelling

KW - Nonvolatile memory

KW - Switches

KW - tunnel electroresistance (TER)

KW - Tunneling

KW - Voltage

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DO - 10.1109/TED.2022.3184654

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SN - 0018-9383

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EP - 7

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

ER -

Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction: A Theoretical Study

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