@inproceedings{fd5ce304c71041349dafe9becae1c831,
title = "Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors",
abstract = "We present our computational study on the transport properties of intrinsic armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon (AGNR & ZGNR) Schottky barrier field-effect transistors (SBFETs). Using ab initio models, we observed that the metal-induced gap states increase the OFF-state current (IOFF) significantly of very short channel devices and the ON/OFF current ratio (ION/IOFF) degrades as the ribbon width increases. Our device performance comparison indicates that while ZGNR SBFETs provide a lower subthreshold swing, AGNR SBFETs provide a lower I OFF and higher ION/IOFF at similar ribbon widths.",
keywords = "Schottky barrier, density functinoal theory, field-effect transistor, graphene nanoribbon, simulation",
author = "Lam, {Kai Tak} and Peck, {Yan Zheng} and Lim, {Zhi Hean} and Gengchiau Liang",
year = "2011",
doi = "10.1109/INEC.2011.5991642",
language = "English",
isbn = "9781457703799",
series = "Proceedings - International NanoElectronics Conference, INEC",
booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",
note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",
}