Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon Schottky barrier field-effect transistors

Kai Tak Lam*, Yan Zheng Peck, Zhi Hean Lim, Gengchiau Liang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present our computational study on the transport properties of intrinsic armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon (AGNR & ZGNR) Schottky barrier field-effect transistors (SBFETs). Using ab initio models, we observed that the metal-induced gap states increase the OFF-state current (IOFF) significantly of very short channel devices and the ON/OFF current ratio (ION/IOFF) degrades as the ribbon width increases. Our device performance comparison indicates that while ZGNR SBFETs provide a lower subthreshold swing, AGNR SBFETs provide a lower I OFF and higher ION/IOFF at similar ribbon widths.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
Country/TerritoryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • Schottky barrier
  • density functinoal theory
  • field-effect transistor
  • graphene nanoribbon
  • simulation

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