Performance and reliability of poly-Si TFTs on FSG buffer layer

Shen De Wang*, Tzu Yun Chang, Chao-Hsin Chien, Wei Hsiang Lo, Jen Yi Sang, Jam Wen Lee, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.

Original languageEnglish
Pages (from-to)467-469
Number of pages3
JournalIeee Electron Device Letters
Issue number7
StatePublished - Jul 2005


  • Buffer layer
  • Fluorinated silicate oxide (FSG)
  • Fluorine
  • Polycrystalline silicon thin-film transistors (poly-Si TFTs)
  • Reliability


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