Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory

Yang Shun Fan; Wei Liang Chan; Chih Hsiang Chang; Guang Ting Zheng; Che Chia Chang; Po-Tsun Liu

doi:10.1109/IPFA.2015.7224421

Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory

Yang Shun Fan, Wei Liang Chan, Chih Hsiang Chang, Guang Ting Zheng, Che Chia Chang, Po-Tsun Liu^*

^*Corresponding author for this work

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The Al-doped zinc tin oxide based RRAM with non-linearity characteristic was demonstrated. The inhabit ratio (I.R.) of 34 was achieved by inserting ∼2nm Al ₂ O ₃ tunnel barrier to ensure the possible incorporation of RRAM cell into high density cross-type array structure. Furthermore, the reliability with endurance and retention are also examined.

Original language	English
Title of host publication	Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	381-384
Number of pages	4
ISBN (Electronic)	9781479999286
DOIs	https://doi.org/10.1109/IPFA.2015.7224421
State	Published - Jun 2015
Event	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan Duration: 29 Jun 2015 → 2 Jul 2015

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2015-August

Conference

Conference	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Country/Territory	Taiwan
City	Hsinchu
Period	29/06/15 → 2/07/15

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10.1109/IPFA.2015.7224421

Cite this

Fan, Y. S., Chan, W. L., Chang, C. H., Zheng, G. T., Chang, C. C., & Liu, P-T. (2015). Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 (pp. 381-384). Article 7224421 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2015.7224421

Fan, Yang Shun ; Chan, Wei Liang ; Chang, Chih Hsiang et al. / Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory. Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 381-384 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{9cca479530d4440da51004ff70d4a808,

title = "Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory",

abstract = " The Al-doped zinc tin oxide based RRAM with non-linearity characteristic was demonstrated. The inhabit ratio (I.R.) of 34 was achieved by inserting ∼2nm Al 2 O 3 tunnel barrier to ensure the possible incorporation of RRAM cell into high density cross-type array structure. Furthermore, the reliability with endurance and retention are also examined. ",

author = "Fan, {Yang Shun} and Chan, {Wei Liang} and Chang, {Chih Hsiang} and Zheng, {Guang Ting} and Chang, {Che Chia} and Po-Tsun Liu",

year = "2015",

month = jun,

doi = "10.1109/IPFA.2015.7224421",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "381--384",

booktitle = "Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015",

address = "United States",

note = "22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 ; Conference date: 29-06-2015 Through 02-07-2015",

}

Fan, YS, Chan, WL, Chang, CH, Zheng, GT, Chang, CC & Liu, P-T 2015, Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory. in Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015., 7224421, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 381-384, 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015, Hsinchu, Taiwan, 29/06/15. https://doi.org/10.1109/IPFA.2015.7224421

Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory. / Fan, Yang Shun; Chan, Wei Liang; Chang, Chih Hsiang et al.
Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 381-384 7224421 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory

AU - Fan, Yang Shun

AU - Chan, Wei Liang

AU - Chang, Chih Hsiang

AU - Zheng, Guang Ting

AU - Chang, Che Chia

AU - Liu, Po-Tsun

PY - 2015/6

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N2 - The Al-doped zinc tin oxide based RRAM with non-linearity characteristic was demonstrated. The inhabit ratio (I.R.) of 34 was achieved by inserting ∼2nm Al 2 O 3 tunnel barrier to ensure the possible incorporation of RRAM cell into high density cross-type array structure. Furthermore, the reliability with endurance and retention are also examined.

AB - The Al-doped zinc tin oxide based RRAM with non-linearity characteristic was demonstrated. The inhabit ratio (I.R.) of 34 was achieved by inserting ∼2nm Al 2 O 3 tunnel barrier to ensure the possible incorporation of RRAM cell into high density cross-type array structure. Furthermore, the reliability with endurance and retention are also examined.

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T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 381

EP - 384

BT - Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 29 June 2015 through 2 July 2015

ER -

Fan YS, Chan WL, Chang CH, Zheng GT, Chang CC, Liu P-T. Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 381-384. 7224421. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2015.7224421

Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory

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