Performance and reliability evaluations of p-channel flash memories with different programming schemes

Steve S. Chung; S. N. Kuo; C. M. Yih; Tien-Sheng Chao

doi:10.1109/IEDM.1997.650385

Performance and reliability evaluations of p-channel flash memories with different programming schemes

Steve S. Chung^*, S. N. Kuo, C. M. Yih, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Conference article › peer-review

19 Scopus citations

Abstract

In this paper, a complete study of the cell reliability based on a unique oxide damage characterization for two different programming schemes of p-channel flash cell will he presented. These two programming schemes are Channel Hot Electron (CHE) injection or Band-to-Band (BTB) tunneling induced hot electron injection. Degradation of memory cells after P/E cycles due to the above oxide damages has been identified. It was found that both N_it and Q_ox will dominate the device degradation during programming. Although p-flash cell has high speed performance by comparing with n-flash cell, extra efforts are needed for designing reliable p-channel flash cell by appropriate drain engineering or related device optimization.

Original language	English
Pages (from-to)	295-298
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.1997.650385
State	Published - 1997
Event	1997 International Electron Devices Meeting - Washington, DC, USA Duration: 7 Dec 1997 → 10 Dec 1997

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title = "Performance and reliability evaluations of p-channel flash memories with different programming schemes",

abstract = "In this paper, a complete study of the cell reliability based on a unique oxide damage characterization for two different programming schemes of p-channel flash cell will he presented. These two programming schemes are Channel Hot Electron (CHE) injection or Band-to-Band (BTB) tunneling induced hot electron injection. Degradation of memory cells after P/E cycles due to the above oxide damages has been identified. It was found that both Nit and Qox will dominate the device degradation during programming. Although p-flash cell has high speed performance by comparing with n-flash cell, extra efforts are needed for designing reliable p-channel flash cell by appropriate drain engineering or related device optimization.",

author = "Chung, {Steve S.} and Kuo, {S. N.} and Yih, {C. M.} and Tien-Sheng Chao",

year = "1997",

doi = "10.1109/IEDM.1997.650385",

language = "English",

pages = "295--298",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

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note = "1997 International Electron Devices Meeting ; Conference date: 07-12-1997 Through 10-12-1997",

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T1 - Performance and reliability evaluations of p-channel flash memories with different programming schemes

AU - Chung, Steve S.

AU - Kuo, S. N.

AU - Yih, C. M.

AU - Chao, Tien-Sheng

PY - 1997

Y1 - 1997

N2 - In this paper, a complete study of the cell reliability based on a unique oxide damage characterization for two different programming schemes of p-channel flash cell will he presented. These two programming schemes are Channel Hot Electron (CHE) injection or Band-to-Band (BTB) tunneling induced hot electron injection. Degradation of memory cells after P/E cycles due to the above oxide damages has been identified. It was found that both Nit and Qox will dominate the device degradation during programming. Although p-flash cell has high speed performance by comparing with n-flash cell, extra efforts are needed for designing reliable p-channel flash cell by appropriate drain engineering or related device optimization.

AB - In this paper, a complete study of the cell reliability based on a unique oxide damage characterization for two different programming schemes of p-channel flash cell will he presented. These two programming schemes are Channel Hot Electron (CHE) injection or Band-to-Band (BTB) tunneling induced hot electron injection. Degradation of memory cells after P/E cycles due to the above oxide damages has been identified. It was found that both Nit and Qox will dominate the device degradation during programming. Although p-flash cell has high speed performance by comparing with n-flash cell, extra efforts are needed for designing reliable p-channel flash cell by appropriate drain engineering or related device optimization.

UR - http://www.scopus.com/inward/record.url?scp=84886448075&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1997.650385

DO - 10.1109/IEDM.1997.650385

M3 - Conference article

AN - SCOPUS:84886448075

SN - 0163-1918

SP - 295

EP - 298

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -

Performance and reliability evaluations of p-channel flash memories with different programming schemes

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