Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement

Woei Cherng Wu*, Tien-Sheng Chao, Te Hsin Chiu, Jer Chyi Wang, Chao Sung Lai, Ming Wen Ma, Wen Cheng Lo

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

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Material Science