Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement
- Woei Cherng Wu*
- , Tien-Sheng Chao
- , Te Hsin Chiu
- , Jer Chyi Wang
- , Chao Sung Lai
- , Ming Wen Ma
- , Wen Cheng Lo
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
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