Pentacene phototransistor with gate voltage independent responsivity and sensitivity by small silver nanoparticles decoration

S. H. Yuan; Z. Pei; H. C. Lai; Pei-Wen Li; Y. J. Chan

doi:10.1016/j.orgel.2015.08.022

Pentacene phototransistor with gate voltage independent responsivity and sensitivity by small silver nanoparticles decoration

S. H. Yuan, Z. Pei^*, H. C. Lai, Pei-Wen Li, Y. J. Chan

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this study, a Pentacene phototransistor (PT) decorated with silver nanoparticles (Ag-NPs) in bottom gate structure was demonstrated. With the ultra-small Ag-NPs, this device exploits surface plasmon resonance at 445 nm and established a stable surface conduction channel under light illumination. Therefore, the PT exhibit gate voltage independent responsivity and photosensitivity in broad range of gate voltage. The light-induced magnetized in ultra-small Ag-NPs that generate polarized surface electrons were used to explain the gate-voltage independent photocurrent. The maximum photosensitivity and responsivity are 2.1 × 10³ and 17.7 mA/W, respectively, under white-light illumination. They are enhanced around 25 times at gate voltage of 20 V than conventional phototransistor. This device may be used in flexible optical interactive display, white-light indoor communication, or optical sensors.

Original language	English
Article number	3244
Pages (from-to)	7-11
Number of pages	5
Journal	Organic Electronics
Volume	27
DOIs	https://doi.org/10.1016/j.orgel.2015.08.022
State	Published - 1 Dec 2015

Keywords

Light-induced magnetized
Photosensitivity
Phototransistor
Responsivity
Silver nanoparticles

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10.1016/j.orgel.2015.08.022

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@article{d7a42a8998fc4daaa0fe179147109f31,

title = "Pentacene phototransistor with gate voltage independent responsivity and sensitivity by small silver nanoparticles decoration",

abstract = "In this study, a Pentacene phototransistor (PT) decorated with silver nanoparticles (Ag-NPs) in bottom gate structure was demonstrated. With the ultra-small Ag-NPs, this device exploits surface plasmon resonance at 445 nm and established a stable surface conduction channel under light illumination. Therefore, the PT exhibit gate voltage independent responsivity and photosensitivity in broad range of gate voltage. The light-induced magnetized in ultra-small Ag-NPs that generate polarized surface electrons were used to explain the gate-voltage independent photocurrent. The maximum photosensitivity and responsivity are 2.1 × 103 and 17.7 mA/W, respectively, under white-light illumination. They are enhanced around 25 times at gate voltage of 20 V than conventional phototransistor. This device may be used in flexible optical interactive display, white-light indoor communication, or optical sensors.",

keywords = "Light-induced magnetized, Photosensitivity, Phototransistor, Responsivity, Silver nanoparticles",

author = "Yuan, {S. H.} and Z. Pei and Lai, {H. C.} and Pei-Wen Li and Chan, {Y. J.}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

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day = "1",

doi = "10.1016/j.orgel.2015.08.022",

language = "English",

volume = "27",

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journal = "Organic Electronics",

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TY - JOUR

T1 - Pentacene phototransistor with gate voltage independent responsivity and sensitivity by small silver nanoparticles decoration

AU - Yuan, S. H.

AU - Pei, Z.

AU - Lai, H. C.

AU - Li, Pei-Wen

AU - Chan, Y. J.

PY - 2015/12/1

Y1 - 2015/12/1

N2 - In this study, a Pentacene phototransistor (PT) decorated with silver nanoparticles (Ag-NPs) in bottom gate structure was demonstrated. With the ultra-small Ag-NPs, this device exploits surface plasmon resonance at 445 nm and established a stable surface conduction channel under light illumination. Therefore, the PT exhibit gate voltage independent responsivity and photosensitivity in broad range of gate voltage. The light-induced magnetized in ultra-small Ag-NPs that generate polarized surface electrons were used to explain the gate-voltage independent photocurrent. The maximum photosensitivity and responsivity are 2.1 × 103 and 17.7 mA/W, respectively, under white-light illumination. They are enhanced around 25 times at gate voltage of 20 V than conventional phototransistor. This device may be used in flexible optical interactive display, white-light indoor communication, or optical sensors.

AB - In this study, a Pentacene phototransistor (PT) decorated with silver nanoparticles (Ag-NPs) in bottom gate structure was demonstrated. With the ultra-small Ag-NPs, this device exploits surface plasmon resonance at 445 nm and established a stable surface conduction channel under light illumination. Therefore, the PT exhibit gate voltage independent responsivity and photosensitivity in broad range of gate voltage. The light-induced magnetized in ultra-small Ag-NPs that generate polarized surface electrons were used to explain the gate-voltage independent photocurrent. The maximum photosensitivity and responsivity are 2.1 × 103 and 17.7 mA/W, respectively, under white-light illumination. They are enhanced around 25 times at gate voltage of 20 V than conventional phototransistor. This device may be used in flexible optical interactive display, white-light indoor communication, or optical sensors.

KW - Light-induced magnetized

KW - Photosensitivity

KW - Phototransistor

KW - Responsivity

KW - Silver nanoparticles

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U2 - 10.1016/j.orgel.2015.08.022

DO - 10.1016/j.orgel.2015.08.022

M3 - Article

AN - SCOPUS:84940835084

SN - 1566-1199

VL - 27

SP - 7

EP - 11

JO - Organic Electronics

JF - Organic Electronics

M1 - 3244

ER -

Pentacene phototransistor with gate voltage independent responsivity and sensitivity by small silver nanoparticles decoration

Abstract

Keywords

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