Pattern Profile Distortion and Stress Evolution in Nanoporous Qrganosilicates after Photoresist Stripping

Po-Tsun Liu; C. W. Chen; T. C. Chang; Tseung-Yuen Tseng

doi:10.1149/1.1632871

Pattern Profile Distortion and Stress Evolution in Nanoporous Qrganosilicates after Photoresist Stripping

Po-Tsun Liu^*, C. W. Chen, T. C. Chang, Tseung-Yuen Tseng

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

Pattern profile distortion of nanoporous organosilicates has been investigated after pattern transfer processes. After photoresist stripping with O₂-plasma ashing, many organic function groups are destroyed and sequentially transformed into siloxanol groups (Si-OH) in the nanoporous organosilicates. The interaction between siloxanol groups and the gelation reaction occurred in the internal porous organosilicates predominate stress evolution, leading to the deformation of patterned porous organosilicate films. This physical mechanism responsible for pattern distortion and stress evolution can be consistently confirmed through the residual stress vs. temperature measurement and Fourier transform infrared spectroscopy.

Original language	American English
Pages (from-to)	F5-F7
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	2
DOIs	https://doi.org/10.1149/1.1632871
State	Published - 8 Apr 2004

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abstract = "Pattern profile distortion of nanoporous organosilicates has been investigated after pattern transfer processes. After photoresist stripping with O2-plasma ashing, many organic function groups are destroyed and sequentially transformed into siloxanol groups (Si-OH) in the nanoporous organosilicates. The interaction between siloxanol groups and the gelation reaction occurred in the internal porous organosilicates predominate stress evolution, leading to the deformation of patterned porous organosilicate films. This physical mechanism responsible for pattern distortion and stress evolution can be consistently confirmed through the residual stress vs. temperature measurement and Fourier transform infrared spectroscopy.",

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AU - Chang, T. C.

AU - Tseng, Tseung-Yuen

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N2 - Pattern profile distortion of nanoporous organosilicates has been investigated after pattern transfer processes. After photoresist stripping with O2-plasma ashing, many organic function groups are destroyed and sequentially transformed into siloxanol groups (Si-OH) in the nanoporous organosilicates. The interaction between siloxanol groups and the gelation reaction occurred in the internal porous organosilicates predominate stress evolution, leading to the deformation of patterned porous organosilicate films. This physical mechanism responsible for pattern distortion and stress evolution can be consistently confirmed through the residual stress vs. temperature measurement and Fourier transform infrared spectroscopy.

AB - Pattern profile distortion of nanoporous organosilicates has been investigated after pattern transfer processes. After photoresist stripping with O2-plasma ashing, many organic function groups are destroyed and sequentially transformed into siloxanol groups (Si-OH) in the nanoporous organosilicates. The interaction between siloxanol groups and the gelation reaction occurred in the internal porous organosilicates predominate stress evolution, leading to the deformation of patterned porous organosilicate films. This physical mechanism responsible for pattern distortion and stress evolution can be consistently confirmed through the residual stress vs. temperature measurement and Fourier transform infrared spectroscopy.

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Pattern Profile Distortion and Stress Evolution in Nanoporous Qrganosilicates after Photoresist Stripping

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