Pattern effect optimized with non-native surface passivation in copper abrasive-free polishing

J. Y. Fang; M. S. Tsai; B. T. Dai; Yew-Chuhg Wu; M. S. Feng

doi:10.1149/1.1887188

Pattern effect optimized with non-native surface passivation in copper abrasive-free polishing

J. Y. Fang^*, M. S. Tsai, B. T. Dai, Yew-Chuhg Wu, M. S. Feng

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Pattern effects, resulting from different metal removal rates on various feature designs in copper chemical mechanical polishing (Cu CMP), can be reduced in an abrasive-free slurry formulated with HNO₃ and benzotriazole (BTA). In the slurry, non-native Cu-BTA adlayer is formed instead of native metal oxide as surface passivation layer on a Cu surface, and it benefits nonlinear Cu removal rate as function of down force. Moreover, by controlling the down force, the Cu removal rate can be independent of down force resulting in the reduction of pattern effect.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	5
DOIs	https://doi.org/10.1149/1.1887188
State	Published - 1 Jun 2005

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abstract = "Pattern effects, resulting from different metal removal rates on various feature designs in copper chemical mechanical polishing (Cu CMP), can be reduced in an abrasive-free slurry formulated with HNO3 and benzotriazole (BTA). In the slurry, non-native Cu-BTA adlayer is formed instead of native metal oxide as surface passivation layer on a Cu surface, and it benefits nonlinear Cu removal rate as function of down force. Moreover, by controlling the down force, the Cu removal rate can be independent of down force resulting in the reduction of pattern effect.",

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AU - Fang, J. Y.

AU - Tsai, M. S.

AU - Dai, B. T.

AU - Wu, Yew-Chuhg

AU - Feng, M. S.

PY - 2005/6/1

Y1 - 2005/6/1

N2 - Pattern effects, resulting from different metal removal rates on various feature designs in copper chemical mechanical polishing (Cu CMP), can be reduced in an abrasive-free slurry formulated with HNO3 and benzotriazole (BTA). In the slurry, non-native Cu-BTA adlayer is formed instead of native metal oxide as surface passivation layer on a Cu surface, and it benefits nonlinear Cu removal rate as function of down force. Moreover, by controlling the down force, the Cu removal rate can be independent of down force resulting in the reduction of pattern effect.

AB - Pattern effects, resulting from different metal removal rates on various feature designs in copper chemical mechanical polishing (Cu CMP), can be reduced in an abrasive-free slurry formulated with HNO3 and benzotriazole (BTA). In the slurry, non-native Cu-BTA adlayer is formed instead of native metal oxide as surface passivation layer on a Cu surface, and it benefits nonlinear Cu removal rate as function of down force. Moreover, by controlling the down force, the Cu removal rate can be independent of down force resulting in the reduction of pattern effect.

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ER -

Pattern effect optimized with non-native surface passivation in copper abrasive-free polishing

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