Particle contaminations in LPCVD polysilicon

W. H. Chen; Tien-Sheng Chao; Y. N. Liu; T. F. Lei; K. S. Chou

doi:10.1049/el:19950114

Particle contaminations in LPCVD polysilicon

W. H. Chen, Tien-Sheng Chao, Y. N. Liu, T. F. Lei, K. S. Chou

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

Abstract

Particle contamination of poly-Si films deposited in an LPCVD system was investigated by using the orthogonal array L8 experiment. Gas injection, temperature, pressure and flow rate were used as variable factors. The surfaces of samples were analysed by using SEM and AFM. Results indicated that the construction of the gas injection’ was the key parameter to suppress particle formation. Applying a multiple-hole injector at the back of the tube reduced these surface defects.

Original language	English
Pages (from-to)	239-241
Number of pages	3
Journal	Electronics Letters
Volume	31
Issue number	3
DOIs	https://doi.org/10.1049/el:19950114
State	Published - 2 Feb 1995

Keywords

Chemical vapour deposition
Polysilicon

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10.1049/el:19950114

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title = "Particle contaminations in LPCVD polysilicon",

abstract = "Particle contamination of poly-Si films deposited in an LPCVD system was investigated by using the orthogonal array L8 experiment. Gas injection, temperature, pressure and flow rate were used as variable factors. The surfaces of samples were analysed by using SEM and AFM. Results indicated that the construction of the gas injection{\textquoteright} was the key parameter to suppress particle formation. Applying a multiple-hole injector at the back of the tube reduced these surface defects.",

keywords = "Chemical vapour deposition, Polysilicon",

author = "Chen, {W. H.} and Tien-Sheng Chao and Liu, {Y. N.} and Lei, {T. F.} and Chou, {K. S.}",

year = "1995",

month = feb,

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doi = "10.1049/el:19950114",

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volume = "31",

pages = "239--241",

journal = "Electronics Letters",

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T1 - Particle contaminations in LPCVD polysilicon

AU - Chen, W. H.

AU - Chao, Tien-Sheng

AU - Liu, Y. N.

AU - Lei, T. F.

AU - Chou, K. S.

PY - 1995/2/2

Y1 - 1995/2/2

N2 - Particle contamination of poly-Si films deposited in an LPCVD system was investigated by using the orthogonal array L8 experiment. Gas injection, temperature, pressure and flow rate were used as variable factors. The surfaces of samples were analysed by using SEM and AFM. Results indicated that the construction of the gas injection’ was the key parameter to suppress particle formation. Applying a multiple-hole injector at the back of the tube reduced these surface defects.

AB - Particle contamination of poly-Si films deposited in an LPCVD system was investigated by using the orthogonal array L8 experiment. Gas injection, temperature, pressure and flow rate were used as variable factors. The surfaces of samples were analysed by using SEM and AFM. Results indicated that the construction of the gas injection’ was the key parameter to suppress particle formation. Applying a multiple-hole injector at the back of the tube reduced these surface defects.

KW - Chemical vapour deposition

KW - Polysilicon

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U2 - 10.1049/el:19950114

DO - 10.1049/el:19950114

M3 - Article

AN - SCOPUS:0029632435

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VL - 31

SP - 239

EP - 241

JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -

Particle contaminations in LPCVD polysilicon

Abstract

Keywords

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