A parametric study of power MOSFETs

Chen-Ming Hu

doi:10.1109/PESC.1979.7081051

A parametric study of power MOSFETs

Chen-Ming Hu^*

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

45 Scopus citations

Abstract

The theoretical limitations of V-grooved and double-diffused power MOSFETs are studied using several design parameters as variables. The results are used to gauge the performance of currently available power MOSFETs and to project the capabilities of future devices. With proper design, the channel resistance can be negligible so that the on-state resistance is that of the bulk material (~8.3xl0^-9 V_dsB ^2.5 Ω.cm²) plus the lead resistance. A transmission line effect associated with long resistive gate electrodes could limit the speed of certain devices. Devices with the capability of switching 10 kW per cm² of chip area and hundred kilowatt per package are theoretically possible over a very wide voltage range. A new structure is proposed that could raise the power capability by an order of magnitude in very high voltage devices.

Original language	English
Pages (from-to)	385-395
Number of pages	11
Journal	PESC Record - IEEE Annual Power Electronics Specialists Conference
DOIs	https://doi.org/10.1109/PESC.1979.7081051
State	Published - Jun 1979
Event	10th Annual IEEE Power Electronics Specialists Conference, PESC 1979 - San Diego, United States Duration: 18 Jun 1979 → 22 Jun 1979

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10.1109/PESC.1979.7081051

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title = "A parametric study of power MOSFETs",

abstract = "The theoretical limitations of V-grooved and double-diffused power MOSFETs are studied using several design parameters as variables. The results are used to gauge the performance of currently available power MOSFETs and to project the capabilities of future devices. With proper design, the channel resistance can be negligible so that the on-state resistance is that of the bulk material (~8.3xl0-9 VdsB 2.5 Ω.cm2) plus the lead resistance. A transmission line effect associated with long resistive gate electrodes could limit the speed of certain devices. Devices with the capability of switching 10 kW per cm2 of chip area and hundred kilowatt per package are theoretically possible over a very wide voltage range. A new structure is proposed that could raise the power capability by an order of magnitude in very high voltage devices.",

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N2 - The theoretical limitations of V-grooved and double-diffused power MOSFETs are studied using several design parameters as variables. The results are used to gauge the performance of currently available power MOSFETs and to project the capabilities of future devices. With proper design, the channel resistance can be negligible so that the on-state resistance is that of the bulk material (~8.3xl0-9 VdsB 2.5 Ω.cm2) plus the lead resistance. A transmission line effect associated with long resistive gate electrodes could limit the speed of certain devices. Devices with the capability of switching 10 kW per cm2 of chip area and hundred kilowatt per package are theoretically possible over a very wide voltage range. A new structure is proposed that could raise the power capability by an order of magnitude in very high voltage devices.

AB - The theoretical limitations of V-grooved and double-diffused power MOSFETs are studied using several design parameters as variables. The results are used to gauge the performance of currently available power MOSFETs and to project the capabilities of future devices. With proper design, the channel resistance can be negligible so that the on-state resistance is that of the bulk material (~8.3xl0-9 VdsB 2.5 Ω.cm2) plus the lead resistance. A transmission line effect associated with long resistive gate electrodes could limit the speed of certain devices. Devices with the capability of switching 10 kW per cm2 of chip area and hundred kilowatt per package are theoretically possible over a very wide voltage range. A new structure is proposed that could raise the power capability by an order of magnitude in very high voltage devices.

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JO - PESC Record - IEEE Annual Power Electronics Specialists Conference

JF - PESC Record - IEEE Annual Power Electronics Specialists Conference

Y2 - 18 June 1979 through 22 June 1979

ER -

A parametric study of power MOSFETs

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