Integration of surface state and geometry effects on high performance amorphous IGZO thin-film transistors

Li Wei Liu; Yun Chu Tsai; Po-Tsun Liu; Han Ping D Shieh

doi:10.1889/1.3621032

Integration of surface state and geometry effects on high performance amorphous IGZO thin-film transistors

Li Wei Liu^*, Yun Chu Tsai, Po-Tsun Liu, Han Ping D Shieh

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

The influence of surface state effects of a-IGZO TFTs is investigated and modeled by adopting two different structures. The inverted-staggered TFTs with the less surface state effects show both improved sub-threshold swing and stable performances compared to inverted-coplanar TFTs. Based on our result, the inverted-staggered structure is suitable as high-performance a-IGZO TFTs.

Original language	English
Pages (from-to)	1162-1165
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	42
Issue number	1
DOIs	https://doi.org/10.1889/1.3621032
State	Published - 1 Jun 2011
Event	49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 - Los Angeles, CA, United States Duration: 15 May 2011 → 20 May 2011

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@article{abfe02b0e603480e9311890beadb08de,

title = "Integration of surface state and geometry effects on high performance amorphous IGZO thin-film transistors",

abstract = "The influence of surface state effects of a-IGZO TFTs is investigated and modeled by adopting two different structures. The inverted-staggered TFTs with the less surface state effects show both improved sub-threshold swing and stable performances compared to inverted-coplanar TFTs. Based on our result, the inverted-staggered structure is suitable as high-performance a-IGZO TFTs.",

author = "Liu, {Li Wei} and Tsai, {Yun Chu} and Po-Tsun Liu and Shieh, {Han Ping D}",

year = "2011",

month = jun,

day = "1",

doi = "10.1889/1.3621032",

language = "English",

volume = "42",

pages = "1162--1165",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "1",

note = "49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 ; Conference date: 15-05-2011 Through 20-05-2011",

}

TY - JOUR

T1 - Integration of surface state and geometry effects on high performance amorphous IGZO thin-film transistors

AU - Liu, Li Wei

AU - Tsai, Yun Chu

AU - Liu, Po-Tsun

AU - Shieh, Han Ping D

PY - 2011/6/1

Y1 - 2011/6/1

N2 - The influence of surface state effects of a-IGZO TFTs is investigated and modeled by adopting two different structures. The inverted-staggered TFTs with the less surface state effects show both improved sub-threshold swing and stable performances compared to inverted-coplanar TFTs. Based on our result, the inverted-staggered structure is suitable as high-performance a-IGZO TFTs.

AB - The influence of surface state effects of a-IGZO TFTs is investigated and modeled by adopting two different structures. The inverted-staggered TFTs with the less surface state effects show both improved sub-threshold swing and stable performances compared to inverted-coplanar TFTs. Based on our result, the inverted-staggered structure is suitable as high-performance a-IGZO TFTs.

UR - http://www.scopus.com/inward/record.url?scp=84860869725&partnerID=8YFLogxK

U2 - 10.1889/1.3621032

DO - 10.1889/1.3621032

M3 - Article

AN - SCOPUS:84860869725

SN - 0097-966X

VL - 42

SP - 1162

EP - 1165

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011

Y2 - 15 May 2011 through 20 May 2011

ER -

Integration of surface state and geometry effects on high performance amorphous IGZO thin-film transistors

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