P-10: Cmos-like ambipolar organic/inorganic tfts for amlcd and amoled applications

Yi Hsing Chu, Gao Ming Wu, Chiao Shun Chuang, Wei Kuan Yu, Fang-Chung Chen, Han Ping D. Shieh, Chi Neng Mo, Huai An Li, Mei Tsao Chiang

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


Air-stable ambipolar thin-film transistors (TFTs) based on double active layer of pentacene / a-IGZO (amorphous In2O3-Ga2O3-ZnO) have been fabricated on SiO2 /p-Si substrates. The a-IGZO exhibits n-channel behavior, while pentacene presents p-channel characteristics. Most n-type organic materials are easily affected by moisture and oxygen, thus the measurement of ambipolar devices in ambience air is difficult. However, a-IGZO not only has outstanding mobility but also has good stability while being measured in ambient air. In our work, a CMOS-like inverter was constructed by using two identical ambipolar transistors and the voltage gain up to 70 was obtained. The inverter can be operated in both the first and the third quadrants simplifying circuit design for AMFPD applications.

Original languageEnglish
Pages (from-to)1113-1116
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Issue number1
StatePublished - Jun 2009
Event2009 Vehicles and Photons Symposium - Dearborn, MI, United States
Duration: 15 Oct 200916 Oct 2009


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