P-10: Cmos-like ambipolar organic/inorganic tfts for amlcd and amoled applications

Yi Hsing Chu; Gao Ming Wu; Chiao Shun Chuang; Wei Kuan Yu; Fang-Chung Chen; Han Ping D. Shieh; Chi Neng Mo; Huai An Li; Mei Tsao Chiang

doi:10.1889/1.3256480

P-10: Cmos-like ambipolar organic/inorganic tfts for amlcd and amoled applications

Yi Hsing Chu, Gao Ming Wu, Chiao Shun Chuang, Wei Kuan Yu, Fang-Chung Chen, Han Ping D. Shieh, Chi Neng Mo, Huai An Li, Mei Tsao Chiang

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Air-stable ambipolar thin-film transistors (TFTs) based on double active layer of pentacene / a-IGZO (amorphous In₂O₃-Ga₂O₃-ZnO) have been fabricated on SiO₂ /p-Si substrates. The a-IGZO exhibits n-channel behavior, while pentacene presents p-channel characteristics. Most n-type organic materials are easily affected by moisture and oxygen, thus the measurement of ambipolar devices in ambience air is difficult. However, a-IGZO not only has outstanding mobility but also has good stability while being measured in ambient air. In our work, a CMOS-like inverter was constructed by using two identical ambipolar transistors and the voltage gain up to 70 was obtained. The inverter can be operated in both the first and the third quadrants simplifying circuit design for AMFPD applications.

Original language	English
Pages (from-to)	1113-1116
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	40
Issue number	1
DOIs	https://doi.org/10.1889/1.3256480
State	Published - Jun 2009
Event	2009 Vehicles and Photons Symposium - Dearborn, MI, United States Duration: 15 Oct 2009 → 16 Oct 2009

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title = "P-10: Cmos-like ambipolar organic/inorganic tfts for amlcd and amoled applications",

abstract = "Air-stable ambipolar thin-film transistors (TFTs) based on double active layer of pentacene / a-IGZO (amorphous In2O3-Ga2O3-ZnO) have been fabricated on SiO2 /p-Si substrates. The a-IGZO exhibits n-channel behavior, while pentacene presents p-channel characteristics. Most n-type organic materials are easily affected by moisture and oxygen, thus the measurement of ambipolar devices in ambience air is difficult. However, a-IGZO not only has outstanding mobility but also has good stability while being measured in ambient air. In our work, a CMOS-like inverter was constructed by using two identical ambipolar transistors and the voltage gain up to 70 was obtained. The inverter can be operated in both the first and the third quadrants simplifying circuit design for AMFPD applications.",

author = "Chu, {Yi Hsing} and Wu, {Gao Ming} and Chuang, {Chiao Shun} and Yu, {Wei Kuan} and Fang-Chung Chen and Shieh, {Han Ping D.} and Mo, {Chi Neng} and Li, {Huai An} and Chiang, {Mei Tsao}",

year = "2009",

month = jun,

doi = "10.1889/1.3256480",

language = "English",

volume = "40",

pages = "1113--1116",

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publisher = "John Wiley and Sons Inc.",

number = "1",

note = "2009 Vehicles and Photons Symposium ; Conference date: 15-10-2009 Through 16-10-2009",

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AU - Chu, Yi Hsing

AU - Wu, Gao Ming

AU - Chuang, Chiao Shun

AU - Yu, Wei Kuan

AU - Chen, Fang-Chung

AU - Shieh, Han Ping D.

AU - Mo, Chi Neng

AU - Li, Huai An

AU - Chiang, Mei Tsao

PY - 2009/6

Y1 - 2009/6

N2 - Air-stable ambipolar thin-film transistors (TFTs) based on double active layer of pentacene / a-IGZO (amorphous In2O3-Ga2O3-ZnO) have been fabricated on SiO2 /p-Si substrates. The a-IGZO exhibits n-channel behavior, while pentacene presents p-channel characteristics. Most n-type organic materials are easily affected by moisture and oxygen, thus the measurement of ambipolar devices in ambience air is difficult. However, a-IGZO not only has outstanding mobility but also has good stability while being measured in ambient air. In our work, a CMOS-like inverter was constructed by using two identical ambipolar transistors and the voltage gain up to 70 was obtained. The inverter can be operated in both the first and the third quadrants simplifying circuit design for AMFPD applications.

AB - Air-stable ambipolar thin-film transistors (TFTs) based on double active layer of pentacene / a-IGZO (amorphous In2O3-Ga2O3-ZnO) have been fabricated on SiO2 /p-Si substrates. The a-IGZO exhibits n-channel behavior, while pentacene presents p-channel characteristics. Most n-type organic materials are easily affected by moisture and oxygen, thus the measurement of ambipolar devices in ambience air is difficult. However, a-IGZO not only has outstanding mobility but also has good stability while being measured in ambient air. In our work, a CMOS-like inverter was constructed by using two identical ambipolar transistors and the voltage gain up to 70 was obtained. The inverter can be operated in both the first and the third quadrants simplifying circuit design for AMFPD applications.

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Y2 - 15 October 2009 through 16 October 2009

ER -

P-10: Cmos-like ambipolar organic/inorganic tfts for amlcd and amoled applications

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