Oxygen Vacancy in Hafnia as a Blue Luminescence Center and a Trap of Charge Carriers

Vladimir A. Gritsenko; Damir R. Islamov; Timofey V. Perevalov; Vladimir Sh Aliev; Alexander P. Yelisseyev; Elena E. Lomonova; Vladimir A. Pustovarov; Albert Chin

doi:10.1021/acs.jpcc.6b05457

Oxygen Vacancy in Hafnia as a Blue Luminescence Center and a Trap of Charge Carriers

Vladimir A. Gritsenko, Damir R. Islamov, Timofey V. Perevalov^*, Vladimir Sh Aliev, Alexander P. Yelisseyev, Elena E. Lomonova, Vladimir A. Pustovarov, Albert Chin

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

The electronic properties of HfO₂, in particular, luminescence and charge transport, are determined by defects and traps. The origin of luminescence centers and traps of charge carriers in a HfO₂ crystal was studied using luminescence spectroscopy, charge transport, and quantum-chemical calculation. The 2.7 eV luminescence band and 5.2 eV absorption/luminescence excitation band are associated with an oxygen vacancy. The thermal activation energy 1.25 eV, estimated from the charge transport and thermoluminescence experiment, is equal to half of the Stokes shift in photoluminescence spectra. Hence, oxygen vacancies are supposed to operate as electron traps in HfO₂, and the charge transport is described by phonon-assisted tunneling between traps.

Original language	English
Pages (from-to)	19980-19986
Number of pages	7
Journal	Journal of Physical Chemistry C
Volume	120
Issue number	36
DOIs	https://doi.org/10.1021/acs.jpcc.6b05457
State	Published - 15 Sep 2016

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title = "Oxygen Vacancy in Hafnia as a Blue Luminescence Center and a Trap of Charge Carriers",

abstract = "The electronic properties of HfO2, in particular, luminescence and charge transport, are determined by defects and traps. The origin of luminescence centers and traps of charge carriers in a HfO2 crystal was studied using luminescence spectroscopy, charge transport, and quantum-chemical calculation. The 2.7 eV luminescence band and 5.2 eV absorption/luminescence excitation band are associated with an oxygen vacancy. The thermal activation energy 1.25 eV, estimated from the charge transport and thermoluminescence experiment, is equal to half of the Stokes shift in photoluminescence spectra. Hence, oxygen vacancies are supposed to operate as electron traps in HfO2, and the charge transport is described by phonon-assisted tunneling between traps.",

author = "Gritsenko, {Vladimir A.} and Islamov, {Damir R.} and Perevalov, {Timofey V.} and Aliev, {Vladimir Sh} and Yelisseyev, {Alexander P.} and Lomonova, {Elena E.} and Pustovarov, {Vladimir A.} and Albert Chin",

year = "2016",

month = sep,

day = "15",

doi = "10.1021/acs.jpcc.6b05457",

language = "English",

volume = "120",

pages = "19980--19986",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "36",

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TY - JOUR

T1 - Oxygen Vacancy in Hafnia as a Blue Luminescence Center and a Trap of Charge Carriers

AU - Gritsenko, Vladimir A.

AU - Islamov, Damir R.

AU - Perevalov, Timofey V.

AU - Aliev, Vladimir Sh

AU - Yelisseyev, Alexander P.

AU - Lomonova, Elena E.

AU - Pustovarov, Vladimir A.

AU - Chin, Albert

PY - 2016/9/15

Y1 - 2016/9/15

N2 - The electronic properties of HfO2, in particular, luminescence and charge transport, are determined by defects and traps. The origin of luminescence centers and traps of charge carriers in a HfO2 crystal was studied using luminescence spectroscopy, charge transport, and quantum-chemical calculation. The 2.7 eV luminescence band and 5.2 eV absorption/luminescence excitation band are associated with an oxygen vacancy. The thermal activation energy 1.25 eV, estimated from the charge transport and thermoluminescence experiment, is equal to half of the Stokes shift in photoluminescence spectra. Hence, oxygen vacancies are supposed to operate as electron traps in HfO2, and the charge transport is described by phonon-assisted tunneling between traps.

AB - The electronic properties of HfO2, in particular, luminescence and charge transport, are determined by defects and traps. The origin of luminescence centers and traps of charge carriers in a HfO2 crystal was studied using luminescence spectroscopy, charge transport, and quantum-chemical calculation. The 2.7 eV luminescence band and 5.2 eV absorption/luminescence excitation band are associated with an oxygen vacancy. The thermal activation energy 1.25 eV, estimated from the charge transport and thermoluminescence experiment, is equal to half of the Stokes shift in photoluminescence spectra. Hence, oxygen vacancies are supposed to operate as electron traps in HfO2, and the charge transport is described by phonon-assisted tunneling between traps.

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U2 - 10.1021/acs.jpcc.6b05457

DO - 10.1021/acs.jpcc.6b05457

M3 - Article

AN - SCOPUS:84987973338

SN - 1932-7447

VL - 120

SP - 19980

EP - 19986

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 36

ER -

Oxygen Vacancy in Hafnia as a Blue Luminescence Center and a Trap of Charge Carriers

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