Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II—Films

Damir R. Islamov; Vladimir A. Gritsenko; Timofey V. Perevalov; Vladimir Sh Aliev; Vladimir A. Nadolinny; Albert Chin

doi:10.1016/j.mtla.2020.100980

Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II—Films

Damir R. Islamov^*, Vladimir A. Gritsenko, Timofey V. Perevalov, Vladimir Sh Aliev, Vladimir A. Nadolinny, Albert Chin

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The origin of charge carrier traps in ZrO₂ films was studied using charge transport measurements, EPR spectroscopy and quantum-chemical calculations. After the X-ray irradiation of the ZrO₂ films, the EPR spectra from an interstitial oxygen and a negatively charged oxygen vacancy are observed. The trap thermal and optical activation energies 1.25 eV and 2.5 eV are estimated from the charge transport measurements. Within experiments on the extraction of minority carriers from silicon substrates, it was demonstrated that both electrons and holes can be trapped on oxygen vacancies in ZrO₂. Hence, oxygen vacancies are supposed to operate as traps responsible for the charge transport in ZrO₂ films.

Original language	English
Article number	100980
Journal	Materialia
Volume	15
DOIs	https://doi.org/10.1016/j.mtla.2020.100980
State	Published - Mar 2021

Keywords

Charge transport
Defects
EPR
Oxygen vacancy
Zirconium oxide

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title = "Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II—Films",

abstract = "The origin of charge carrier traps in ZrO2 films was studied using charge transport measurements, EPR spectroscopy and quantum-chemical calculations. After the X-ray irradiation of the ZrO2 films, the EPR spectra from an interstitial oxygen and a negatively charged oxygen vacancy are observed. The trap thermal and optical activation energies 1.25 eV and 2.5 eV are estimated from the charge transport measurements. Within experiments on the extraction of minority carriers from silicon substrates, it was demonstrated that both electrons and holes can be trapped on oxygen vacancies in ZrO2. Hence, oxygen vacancies are supposed to operate as traps responsible for the charge transport in ZrO2 films.",

keywords = "Charge transport, Defects, EPR, Oxygen vacancy, Zirconium oxide",

author = "Islamov, {Damir R.} and Gritsenko, {Vladimir A.} and Perevalov, {Timofey V.} and Aliev, {Vladimir Sh} and Nadolinny, {Vladimir A.} and Albert Chin",

note = "Publisher Copyright: {\textcopyright} 2020 Acta Materialia Inc.",

year = "2021",

month = mar,

doi = "10.1016/j.mtla.2020.100980",

language = "English",

volume = "15",

journal = "Materialia",

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TY - JOUR

T1 - Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport

T2 - Part II—Films

AU - Islamov, Damir R.

AU - Gritsenko, Vladimir A.

AU - Perevalov, Timofey V.

AU - Aliev, Vladimir Sh

AU - Nadolinny, Vladimir A.

AU - Chin, Albert

PY - 2021/3

Y1 - 2021/3

N2 - The origin of charge carrier traps in ZrO2 films was studied using charge transport measurements, EPR spectroscopy and quantum-chemical calculations. After the X-ray irradiation of the ZrO2 films, the EPR spectra from an interstitial oxygen and a negatively charged oxygen vacancy are observed. The trap thermal and optical activation energies 1.25 eV and 2.5 eV are estimated from the charge transport measurements. Within experiments on the extraction of minority carriers from silicon substrates, it was demonstrated that both electrons and holes can be trapped on oxygen vacancies in ZrO2. Hence, oxygen vacancies are supposed to operate as traps responsible for the charge transport in ZrO2 films.

AB - The origin of charge carrier traps in ZrO2 films was studied using charge transport measurements, EPR spectroscopy and quantum-chemical calculations. After the X-ray irradiation of the ZrO2 films, the EPR spectra from an interstitial oxygen and a negatively charged oxygen vacancy are observed. The trap thermal and optical activation energies 1.25 eV and 2.5 eV are estimated from the charge transport measurements. Within experiments on the extraction of minority carriers from silicon substrates, it was demonstrated that both electrons and holes can be trapped on oxygen vacancies in ZrO2. Hence, oxygen vacancies are supposed to operate as traps responsible for the charge transport in ZrO2 films.

KW - Charge transport

KW - Defects

KW - EPR

KW - Oxygen vacancy

KW - Zirconium oxide

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DO - 10.1016/j.mtla.2020.100980

M3 - Article

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VL - 15

JO - Materialia

JF - Materialia

M1 - 100980

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Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II—Films

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